Datasheet > HUF76009P3

HUF76009P3

更新时间： 2024-11-05 22:31:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
11页	237K
描述
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs

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HUF76009P3 数据手册

HUF76009P3, HUF76009D3S

Data Sheet

April 2000

File Number 4861.1

20A, 20V, 0.027 Ohm, N-Channel, Logic

Level Power MOSFETs

THE HUF76009 is an application-speciﬁc MOSFET

optimized for switching when used as the upper switch in

synchronous buck applications. The low gate charge and low

input capacitance results in lower driver and lower switching

losses thereby increasing the overall system efﬁciency.

Features

• 20A, 20V

- r

= 0.027Ω, V_GS= 10V

= 0.039Ω, V_GS= 5V

DS(ON)

Symbol

• PWM optimized for synchronous buck applications

• Fast Switching

• Low Gate Charge

- Q Total 11nC (Typ)

• Low Capacitance

- C

470pF (Typ)

ISS

Packaging

50pF (Typ)

RSS

HUF76009D3S

HUFD76009P3

JEDEC TODD2AA

JEDEC TO-220AB

Ordering Information

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

PART NUMBER

PACKAGE

BRAND

76009P

76009D

HUF76009P3

TO-220AB

TO-252AA

HUF76009D3S

GATE

SOURCE

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.

DRAIN

(FLANGE)

Absolute Maximum Ratings

= 25 C, Unless Otherwise Speciﬁed

HUF76009P3,

SYMBOL

PARAMETER

HUF76009D3S

UNITS

Drain to Source Voltage (Note 1)

DSS

Drain to Gate Voltage (R = 20kΩ) (Note 1)

DGR

Gate to Source Voltage

±16

Drain Current

Continuous (T = 25 C, V = 10V) (Figure 2)

Figure 4

Continuous (T = 100 C, V

= 5V)

Pulsed Drain Current

Power Dissipation

0.33

Derate Above 25 C

W/ C

T , T

STG

Operating and Storage Temperature

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

pkg

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case, TO-220, TO-252

Thermal Resistance Junction to Ambient TO-220

Thermal Resistance Junction to Ambient TO-252

3.04

C/W

θJC

C/W

θJA

100

C/W

NOTE:

1. T = 25 C to 125 C.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET® is a registered trademark of Intersil Corporation.

12 3 4 5 6 7...11

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与HUF76009P3相关器件

型号	品牌	获取价格	描述	数据表
HUF76013D3S	FAIRCHILD	获取价格	20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76013D3S	INTERSIL	获取价格	20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76013D3ST	INTERSIL	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 20A I(D) \| TO-252AA
HUF76013D3ST	ROCHESTER	获取价格	20A, 20V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN
HUF76013D3ST_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 20A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
HUF76013D3ST_NL	ROCHESTER	获取价格	20A, 20V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN
HUF76013P3	FAIRCHILD	获取价格	20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76013P3	INTERSIL	获取价格	20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
HUF76013P3	ROCHESTER	获取价格	20A, 20V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
HUF76013P3T	FAIRCHILD	获取价格	Transistor

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