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HUF75639S3R4851

更新时间： 2024-09-24 22:22:51
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英特矽尔 - INTERSIL 晶体晶体管开关
页数 文件大小 规格书
10页 139K
描述
56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

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HUF75639S3R4851 数据手册

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HUF75639S3R4851  
TM  
Data Sheet  
April 2000  
File Number 4854  
56A, 115V, 0.025 Ohm, N-Channel  
UltraFET Power MOSFET  
This N-Channel power MOSFETs is manufactured using the  
innovative UltraFET™ process. This advanced process  
technology achieves the lowest possible on-resistance per  
silicon area, resulting in outstanding performance. This  
device is capable of withstanding high energy in the  
avalanche mode and the diode exhibits very low reverse  
recovery time and stored charge. It was designed for use in  
applications where power efficiency is important, such as  
switching regulators, switching converters, motor drivers,  
relay drivers, low-voltage bus switches, and power  
Features  
• 56A, 115V  
• Simulation Models  
- Temperature Compensated PSPICETM and SABER  
©
Electrical Models  
- Spice and Saber Thermal Impedance Models  
- www.Intersil.com  
management in portable and battery-operated products.  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
Formerly developmental type TA75639.‘  
Ordering Information  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
PART NUMBER  
PACKAGE  
BRAND  
HUF75639S3R4851 TO-262AA  
R4851  
Packaging  
NOTE: When ordering, use the entire part number.  
JEDEC TO-262AA  
Symbol  
SOURCE  
DRAIN  
GATE  
D
G
S
o
Absolute Maximum Ratings  
T
= 25 C, Unless Otherwise Specified  
C
HUF75639S3R4851  
UNITS  
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
115  
115  
±20  
V
V
V
DSS  
Drain to Gate Voltage (R  
GS  
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Drain Current  
GS  
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
56  
A
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
Figure 4  
DM  
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E  
Figures 6, 14, 15  
AS  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
200  
1.35  
W
D
o
o
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
J
-55 to 175  
C
STG  
Maximum Temperature for Soldering  
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
o
300  
260  
C
C
L
o
pkg  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
o
o
1. T = 25 C to 150 C.  
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
PSPICE® is a registered trademark of MicroSim Corporation. | SABER™ is a trademark of Analogy, Inc.  
UltraFET® is a registered trademark of Intersil Corporation.  
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 		Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
HUF75645P3 FAIRCHILD

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