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HUF75639P3_NL PDF预览

HUF75639P3_NL

更新时间： 2024-09-25 20:48:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
10页 225K
描述
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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HUF75639P3_NL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.14
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：56 A
最大漏极电流 (ID)：56 A最大漏源导通电阻：0.025 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：200 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

HUF75639P3_NL 数据手册

 浏览型号HUF75639P3_NL的Datasheet PDF文件第2页浏览型号HUF75639P3_NL的Datasheet PDF文件第3页浏览型号HUF75639P3_NL的Datasheet PDF文件第4页浏览型号HUF75639P3_NL的Datasheet PDF文件第5页浏览型号HUF75639P3_NL的Datasheet PDF文件第6页浏览型号HUF75639P3_NL的Datasheet PDF文件第7页 
HUF75639G3, HUF75639P3, HUF75639S3S,  
HUF75639S3  
Data Sheet  
December 2001  
56A, 100V, 0.025 Ohm, N-Channel  
UltraFET Power MOSFETs  
Features  
• 56A, 100V  
These N-Channel power MOSFETs  
are manufactured using the  
innovative UltraFET® process. This  
• Simulation Models  
- Temperature Compensated PSPICE® and SABER™  
Electrical Models  
advanced process technology  
- Spice and Saber Thermal Impedance Models  
- www.fairchildsemi.com  
achieves the lowest possible on-resistance per silicon area,  
resulting in outstanding performance. This device is capable  
of withstanding high energy in the avalanche mode and the  
diode exhibits very low reverse recovery time and stored  
charge. It was designed for use in applications where power  
efficiency is important, such as switching regulators,  
switching converters, motor drivers, relay drivers, low-  
voltage bus switches, and power management in portable  
and battery-operated products.  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
Formerly developmental type TA75639.  
D
Ordering Information  
PART NUMBER  
HUF75639G3  
HUF75639P3  
PACKAGE  
BRAND  
75639G  
G
TO-247  
TO-220AB  
TO-263AB  
TO-262AA  
75639P  
75639S  
75639S  
S
HUF75639S3S  
HUF75639S3  
NOTE: When ordering, use the entire part number. Add the suffix T to  
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.  
Packaging  
JEDEC STYLE TO-247  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
(TAB)  
JEDEC TO-263AB  
TO-262AA  
SOURCE  
DRAIN  
GATE  
DRAIN  
GATE  
(FLANGE)  
SOURCE  
DRAIN  
(TAB)  
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html  
For severe environments, see our Automotive HUFA series.  
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.  
©2001 Fairchild Semiconductor Corporation  
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B  
1234567...10

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HUF75639P3_NL 替代型号

型号 品牌 替代类型 描述 数据表
HUF75639P3 INTERSIL

功能相似

 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

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 		56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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HUF75639S3S FAIRCHILD

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 		56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

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