Datasheet > HUF75639P3

HUF75639P3

更新时间： 2024-09-24 22:37:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
9页	372K
描述
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

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替代型号

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HUF75639P3 数据手册

HUF75639G3, HUF75639P3, HUF75639S3S

Data Sheet

October 1999

File Number 4477.7

56A, 100V, 0.025 Ohm, N-Channel

UltraFET Power MOSFETs

Features

• 56A, 100V

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET™ process.

• Simulation Models

- Temperature Compensated PSPICE^TMand SABER

Electrical Models

This advanced process technology

- Spice and Saber Thermal Impedance Models

- www.Intersil.com

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efﬁciency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA75639.

Ordering Information

PART NUMBER

PACKAGE

BRAND

75639G

HUF75639G3

TO-247

HUF75639P3

TO-220AB

TO-263AB

75639P

75639S

HUF75639S3S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(TAB)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.

12 3 4 5 6 7...9

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HUF75639P3 替代型号

型号	品牌	替代类型	描述	数据表
HUF75639P3	ONSEMI	功能相似	N 沟道，UltraFET 功率 MOSFET，100V，56A，25mΩ
HUF75639P3_NL	FAIRCHILD	功能相似	Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me

与HUF75639P3相关器件

型号	品牌	获取价格	描述	数据表
HUF75639P3_NL	ROCHESTER	获取价格	56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HUF75639P3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
HUF75639P3-F102	ONSEMI	获取价格	N 沟道，UltraFET 功率 MOSFET，100V，56A，25mΩ
HUF75639S3	FAIRCHILD	获取价格	56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
HUF75639S3	ROCHESTER	获取价格	56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HUF75639S3	ONSEMI	获取价格	100 V、56 A、25 mΩ、N 沟道 UltraFET 功率 MOSFET
HUF75639S3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
HUF75639S3_NL	ROCHESTER	获取价格	56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HUF75639S3R4851	FAIRCHILD	获取价格	56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
HUF75639S3R4851	INTERSIL	获取价格	56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

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