Datasheet > HN1A01F-Y

HN1A01F-Y

更新时间： 2024-11-17 07:00:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	228K
描述
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, 6 PIN, BIP General Purpose Small Signal

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中文翻译

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HN1A01F-Y 数据手册

HN1A01F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

HN1A01F

Unit: mm

Audio-Frequency General-Purpose Amplifier

Applications

z Small package (dual type)

z High voltage and high current

: V

= −50 V, I = −150 mA (max)

CEO

z High h_FE: h = 120 to 400

z Excellent h_FElinearity

: h (I = −0.1 mA) / h (I = −2 mA) = 0.95 (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

CBO

CEO

EBO

−5

JEDEC

―

−150

−30

°C

JEITA

Base current

TOSHIBA

2-3N1A

Weight: 0.015 g (typ.)

Collector power dissipation

Junction temperature

Storage temperature range

P *

300

125

−55 to 125

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*Total rating

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Test

Circuit

Characteristic

Symbol

Test Condition

= −50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

−0.1

400

−0.3

―

μA

―

CBO

―

= −5 V, I = 0

EBO

DC current gain

―

= −6 V, I = −2 mA

120

―

FE (note)

Collector-emitter saturation voltage

Transition frequency

―

= −100 mA, I = −10 mA

−0.1

―

CE (sat)

―

= −10 V, I = −1 mA

―

MHz

Collector output capacitance

―

= −10 V, I = 0, f = 1 MHz

Note:hFE Classification

Y (Y): 120 to 240, GR (G): 200 to 400

) Marking Symbol

(

Start of commercial production

1988-11

2014-03-01

12 3 4

中文翻译

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与HN1A01F-Y相关器件

型号	品牌	获取价格	描述	数据表
HN1A01FYTE85L	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
HN1A01FYTE85R	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
HN1A02F	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications
HN1A02F-GR	TOSHIBA	获取价格	TRANSISTOR 800 mA, 15 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN,
HN1A02F-Y	TOSHIBA	获取价格	TRANSISTOR 800 mA, 15 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN,
HN1A07F	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Small Power Amplifier Application
HN1A07F(TE85L)	TOSHIBA	获取价格	TRANSISTOR,BJT,PAIR,PNP,50V V(BR)CEO,500MA I(C),TSOP
HN1A07F(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,PAIR,PNP,50V V(BR)CEO,500MA I(C),TSOP
HN1A26FS	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Frequency General-Purpose Amplifier Applications
HN1A26FS-GR(TPL3)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),TSOP

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