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HN1B01FDW1T1G PDF预览

HN1B01FDW1T1G

更新时间: 2024-09-23 03:42:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 56K
描述
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

HN1B01FDW1T1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-74包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.95
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.38 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

HN1B01FDW1T1G 数据手册

 浏览型号HN1B01FDW1T1G的Datasheet PDF文件第2页浏览型号HN1B01FDW1T1G的Datasheet PDF文件第3页浏览型号HN1B01FDW1T1G的Datasheet PDF文件第4页浏览型号HN1B01FDW1T1G的Datasheet PDF文件第5页浏览型号HN1B01FDW1T1G的Datasheet PDF文件第6页 
HN1B01FDW1T1  
Complementary Dual  
General Purpose  
Amplifier Transistor  
PNP and NPN Surface Mount  
http://onsemi.com  
Features  
(6)  
(5)  
(4)  
Q
High Voltage and High Current: V  
High h : h = 200X400  
Moisture Sensitivity Level: 1  
= 50 V, I = 200 mA  
CEO  
C
FE FE  
Q
1
2
ESD Rating  
− Human Body Model: 3A  
− Machine Model: C  
(1)  
(2)  
(3)  
Pb−Free Package is Available  
MAXIMUM RATINGS (T = 25°C)  
A
4
5
SC−74  
CASE 318F  
STYLE 3  
6
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
3
2
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
1
V
V
50  
Vdc  
7.0  
Vdc  
Collector Current − Continuous  
I
C
200  
mAdc  
MARKING DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
R9  
M
THERMAL CHARACTERISTICS  
Characteristic  
Power Dissipation  
Symbol  
Max  
380  
Unit  
mW  
°C  
R9 = Device Code  
= Date Code  
P
D
M
Junction Temperature  
Storage Temperature  
T
J
150  
T
stg  
55 to +150  
°C  
ORDERING INFORMATION  
Device  
Package  
Shipping  
HN1B01FDW1T1  
HN1B01FDW1T1G  
SC−74 3000/Tape & Reel  
SC−74 3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
March, 2005 − Rev. 2  
HN1B01FDW1T1/D  

HN1B01FDW1T1G 替代型号

型号 品牌 替代类型 描述 数据表
HN1B01FDW1T1 ONSEMI

类似代替

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

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