Datasheet > HN1B01FTE85N

HN1B01FTE85N

更新时间： 2024-11-17 03:19:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	369K
描述
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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HN1B01FTE85N 数据手册

HN1B01F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

HN1B01F

Audio-Frequency General-Purpose Amplifier Applications

Unit: mm

Q1:

High voltage and high current

: V_CEO= −50 V, I_C= −150 mA (max)

High h_FE: h_FE= 120 to 400

Excellent h_FElinearity

: h_FE(I_C= −0.1 mA) / h_FE(I_C= −2 mA) = 0.95 (typ.)

Q2:

High voltage and high current

: V_CEO= 50 V, I_C= 150 mA (max)

High h_FE: h_FE= 120 to 400

Excellent hFE linearity

: h_FE(I_C= 0.1 mA) / h_FE(I_C= 2 mA) = 0.95 (typ.)

―

JEDEC

JEITA

TOSHIBA

2-3N1A

Weight: 0.015 g (typ.)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Marking

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

−5

CBO

CEO

EBO

−150

−50

Base current

Start of commercial production

1989-02

2014-03-01

12 3 4 5 6

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