Datasheet > HN1B01FUGR

HN1B01FUGR

更新时间： 2024-01-06 06:54:49

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	216K
描述
TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 50V V(BR)CEO \| 150MA I(C) \| TSOP

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中文翻译

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技术参数
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HN1B01FUGR 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.39	最大集电极电流 (IC)：	0.15 A
集电极-发射极最大电压：	50 V	配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	120	JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e0	元件数量：	2
端子数量：	6	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN AND PNP
功耗环境最大值：	0.3 W	最大功率耗散 (Abs)：	0.3 W
认证状态：	Not Qualified	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz	VCEsat-Max：	0.25 V
Base Number Matches：	1

HN1B01FUGR 数据手册

HN1B01FU

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

HN1B01FU

Audio Frequency General Purpose Amplifier Applications

Unit in mm

Q1:

l High voltage and high current

: V_CEO= −50V, I_C= −150mA (max)

l High h_FE: h_FE= 120~400

l Excellent h_FElinearity

: h_FE(I_C= −0.1mA) / h_FE(I_C= −2mA) = 0.95 (typ.)

Q2:

l High voltage and high current

: V_CEO= 50V, I_C= 150mA (max)

l High h_FE: h_FE= 120~400

l Excellent h_FElinearity

: h_FE(I_C= 0.1mA) / h_FE(I_C= 2mA) = 0.95 (typ.)

―ꢀ

JEDEC

EIAJ

―

TOSHIBA

Weight: 6.8 mg

2-2J1A

Q1 Maximum Ratings (Ta = 25°C)

Marking

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

−5

CBO

CEO

EBO

−150

−30

Base current

000707EAA1

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

· The information contained herein is subject to change without notice.

2001-02-07 1/6

12 3 4 5 6

中文翻译

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与HN1B01FUGR相关器件

型号	品牌	获取价格	描述	数据表
HN1B01FU-GR	TOSHIBA	获取价格	Audio-Frequency General-Purpose Amplifier Applications
HN1B01FUGRTE85N	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FUGRTE85R	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FUTE85L	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A,
HN1B01FUTE85N	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FUTE85R	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FUY	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 50V V(BR)CEO \| 150MA I(C) \| TSOP
HN1B01FU-Y	TOSHIBA	获取价格	Audio-Frequency General-Purpose Amplifier Applications
HN1B01FU-Y(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A,
HN1B01FUYTE85L	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General

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