Datasheet > HN1B01FGR

HN1B01FGR

更新时间： 2024-11-15 23:56:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	215K
描述
TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 50V V(BR)CEO \| 150MA I(C) \| TSOP

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中文翻译

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HN1B01FGR 数据手册

HN1B01F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

HN1B01F

Audio Frequency General Purpose Amplifier Applications

Unit in mm

Q1:

High voltage and high current

: V_CEO= −50V, I_C= −150mA (max)

High h_FE: h_FE= 120~400

Excellent h_FElinearity

: h_FE(I_C= −0.1mA) / h_FE(I_C= −2mA) = 0.95 (typ.)

Q2:

High voltage and high current

: V_CEO= 50V, I_C= 150mA (max)

High h_FE: h_FE= 120~400

Excellent hFE linearity

: h_FE(I_C= 0.1mA) / h_FE(I_C= 2mA) = 0.95 (typ.)

―ꢀ

―

JEDEC

EIAJ

TOSHIBA

Weight: 0.015g

2-3N1A

Q1 Maximum Ratings (Ta = 25°C)

Marking

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

−5

CBO

CEO

EBO

−150

−50

Base current

000707EAA2

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

2001-02-07 1/5

12 3 4 5

中文翻译

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与HN1B01FGR相关器件

型号	品牌	获取价格	描述	数据表
HN1B01F-GR	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6,
HN1B01F-GR(T5LMATF	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
HN1B01FGRTE85L	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FGRTE85N	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FTE85N	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FTE85R	TOSHIBA	获取价格	TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
HN1B01FU	TOSHIBA	获取价格	NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN1B01FU_07	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applica
HN1B01FUGR	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 50V V(BR)CEO \| 150MA I(C) \| TSOP
HN1B01FU-GR	TOSHIBA	获取价格	Audio-Frequency General-Purpose Amplifier Applications

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