5秒后页面跳转
HN1B01F-GR(T5LMATF PDF预览

HN1B01F-GR(T5LMATF

更新时间: 2024-01-04 15:57:30
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
6页 369K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

HN1B01F-GR(T5LMATF 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknown风险等级:5.71
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
功耗环境最大值:0.3 W最大功率耗散 (Abs):0.3 W
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
VCEsat-Max:0.25 VBase Number Matches:1

HN1B01F-GR(T5LMATF 数据手册

 浏览型号HN1B01F-GR(T5LMATF的Datasheet PDF文件第2页浏览型号HN1B01F-GR(T5LMATF的Datasheet PDF文件第3页浏览型号HN1B01F-GR(T5LMATF的Datasheet PDF文件第4页浏览型号HN1B01F-GR(T5LMATF的Datasheet PDF文件第5页浏览型号HN1B01F-GR(T5LMATF的Datasheet PDF文件第6页 
HN1B01F  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
HN1B01F  
Audio-Frequency General-Purpose Amplifier Applications  
Unit: mm  
Q1:  
z
High voltage and high current  
: VCEO = 50 V, IC = 150 mA (max)  
z
z
High hFE : hFE = 120 to 400  
Excellent hFE linearity  
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)  
Q2:  
z
High voltage and high current  
: VCEO = 50 V, IC = 150 mA (max)  
z
z
High hFE : hFE = 120 to 400  
Excellent hFE linearity  
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)  
JEDEC  
JEITA  
TOSHIBA  
2-3N1A  
Weight: 0.015 g (typ.)  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
Marking  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
50  
50  
5  
V
V
CBO  
CEO  
EBO  
V
I
150  
50  
mA  
mA  
C
Base current  
I
B
Start of commercial production  
1989-02  
1
2014-03-01  

与HN1B01F-GR(T5LMATF相关器件

型号 品牌 描述 获取价格 数据表
HN1B01FGRTE85L TOSHIBA TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General

获取价格

HN1B01FGRTE85N TOSHIBA TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General

获取价格

HN1B01FTE85N TOSHIBA TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General

获取价格

HN1B01FTE85R TOSHIBA TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General

获取价格

HN1B01FU TOSHIBA NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

获取价格

HN1B01FU_07 TOSHIBA Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applica

获取价格