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HN1B01F-GR(T5LMATF PDF预览

HN1B01F-GR(T5LMATF

更新时间： 2024-02-05 12:53:39
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
6页 369K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

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中文翻译

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HN1B01F-GR(T5LMATF 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：unknown风险等级：5.71
最大集电极电流 (IC)：0.15 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE)：200
JESD-30 代码：R-PDSO-G6元件数量：2
端子数量：6最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN AND PNP
功耗环境最大值：0.3 W最大功率耗散 (Abs)：0.3 W
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
VCEsat-Max：0.25 VBase Number Matches：1

HN1B01F-GR(T5LMATF 数据手册

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HN1B01F  
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Equivalent Circuit (Top View)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
60  
50  
5
V
V
CBO  
CEO  
EBO  
V
I
150  
30  
mA  
mA  
C
Base current  
I
B
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
P *  
Rating  
Unit  
Collector power dissipation  
Junction temperature  
300  
125  
mW  
°C  
C
T
j
Storage temperature range  
T
stg  
−55 to 125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Total rating  
Q1 Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
―
V
V
V
―
―
―
―
―
−0.1  
−0.1  
400  
μA  
μA  
CBO  
CB  
EB  
CE  
E
I
―
―
= −5 V, I = 0  
C
EBO  
h
= −6 V, I = −2 mA  
120  
FE (Note)  
C
Collector-emitter  
saturation voltage  
V
―
I
= −100 mA, I = −10 mA  
―
−0.1  
−0.3  
V
CE (sat)  
C
B
Transition frequency  
f
―
―
V
V
= −10 V, I = −1 mA  
―
―
120  
4
―
―
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
ob  
E
Q2 Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
―
―
―
V
V
V
= 60 V, I = 0  
―
―
―
―
―
0.1  
0.1  
400  
μA  
μA  
CBO  
CB  
EB  
E
I
= 5 V, I = 0  
C
EBO  
h
= 6 V, I = 2 mA  
120  
FE (Note)  
CE  
C
Collector-emitter  
saturation voltage  
V
―
I
= 100 mA, I = 10 mA  
―
0.1  
0.25  
V
CE (sat)  
C
B
Transition frequency  
f
―
―
V
V
= 10 V, I = 1 mA  
―
―
150  
2
―
―
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
E
ob  
Note: hFE Classification Y (Y): 120 to 240, GR (G): 200 to 400  
) Marking symbol  
(
2
2014-03-01  
123456

中文翻译

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