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HN1B01FGR PDF预览

HN1B01FGR

更新时间: 2024-01-21 01:33:32
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
5页 215K
描述
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP

HN1B01FGR 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.39最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:2
端子数量:6最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
功耗环境最大值:0.3 W最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.25 V
Base Number Matches:1

HN1B01FGR 数据手册

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HN1B01F  
Q2 Maximum Ratings (Ta = 25°C)  
Equivalent Circuit (Top View)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
60  
50  
5
V
V
CBO  
CEO  
EBO  
V
I
C
I
B
150  
30  
mA  
mA  
Base current  
Q1,Q2 Common Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
P *  
Rating  
Unit  
Collector power dissipation  
Junction temperature  
Storage temperature range  
*: Total rating  
200  
125  
mW  
°C  
C
T
j
T
55~125  
°C  
stg  
Q1 Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
Circuit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
V
V
V
0.1  
0.1  
400  
µA  
µA  
CBO  
CB  
EB  
CE  
E
I
= 5V, I = 0  
C
EBO  
h
= 6V, I = 2mA  
120  
FE (Note)  
C
Collector-emitter  
saturation voltage  
V
I
= 100mA, I = 10mA  
0.1  
120  
4
0.3  
V
CE (sat)  
C
B
Transition frequency  
f
V
V
= 10V, I = 1mA  
MHz  
pF  
T
CE  
CB  
C
= 10V, I = 0,  
E
Collector output capacitance  
C
ob  
f = 1MHz  
Q2 Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
= 60V, I = 0  
Min  
Typ.  
Max  
Unit  
Circuit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
0.1  
0.1  
µA  
µA  
CBO  
CB  
EB  
E
I
= 5V, I = 0  
C
EBO  
DC current gain  
h
V
= 6V, I = 2mA  
120  
0.1  
150  
2
400  
0.25  
FE (Note)  
CE  
C
Collector-emitter  
saturation voltage  
V
I
= 100mA, I = 10mA  
V
CE (sat)  
C
B
Transition frequency  
f
V
V
= 10V, I = 1mA  
MHz  
pF  
T
CE  
CB  
C
= 10V, I = 0,  
E
Collector output capacitance  
C
ob  
f = 1MHz  
Note:  
h
Classification Y (Y): 120~240, GR (G): 200~400  
FE  
(
) Marking Symbol  
000707EAA2  
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
· The information contained herein is subject to change without notice.  
2001-02-07 2/5  

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