HN1A02F

更新时间： 2024-01-14 21:51:17

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号双极晶体管开关光电二极管 PC
页数	文件大小	规格书
3页	127K
描述
Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications

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HN1A02F 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.77	最大集电极电流 (IC)：	0.8 A
集电极-发射极最大电压：	15 V	配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	120	JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e0	元件数量：	2
端子数量：	6	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.3 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	120 MHz
Base Number Matches：	1

HN1A02F 数据手册

HN1A02F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

HN1A02F

Audio Frequency Power Amplifier Applications

Unit: mm

Switching applications

z High h_FE: h_FE(1)= 120~400

z Low V_CE(sat.): V

= −0.2 V (max.) (I = −400 mA, I = −8 mA)

C B

CE (sat)

z Small Power Motor Driver Application.

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−15

CBO

CEO

EBO

−5

−800

−160

300

°C

1.EMITTER1

2.BASE1

3.COLLECTOR2 (C2)

4.EMITTER2

5.BASE2

6.COLLECTOR1 (C1)

(E1)

(B1)

Base current

Collector power dissipation

Junction temperature

Storage temperature range

P *

(E2)

(B2)

150

−55~150

stg

JEDEC

EIAJ

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

2-3N1A

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

Weight: 0.015mg(typ)

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*Total rating. Power dissipation per element should not exceed 200mW.

Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)

Test

Circuit

Characteristic

Symbol

Test Condition

= −15V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

−100

―

CBO

Emitter cut-off current

―

= −5V, I = 0

EBO

Collector-Emitter Brakedown Voltage

= −10mA,I = 0

−15

120

―

(BR)CEO

―

= −1V, I = −100mA

―

400

―

FE(1) (Note)

DC current gain

= −1V, I = −800mA

―

FE(2)

Collector-emitter saturation voltage

Base-Emitter voltage

= −400mA, I = −8mA

―

−0.2

−0.8

―

CE (sat)

= −5V, I = −10mA

−0.5

―

Transition frequency

―

= −5V, I = −10mA

120

MHz

Collector output capacitance

= −10V, I = 0, f = 1MHz

―

Note: h_FEClassification Y (Y): 120~240, GR (G): 200~400

( ) Marking Symbol

Marking

Equivalent Circuit (Top View)

2007-11-22

12 3

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HN1A02F-GR	TOSHIBA	TRANSISTOR 800 mA, 15 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN,	获取价格
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HN1A07F	TOSHIBA	Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Small Power Amplifier Application	获取价格
HN1A07F(TE85L)	TOSHIBA	TRANSISTOR,BJT,PAIR,PNP,50V V(BR)CEO,500MA I(C),TSOP	获取价格
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