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HN1A07F PDF预览

HN1A07F

更新时间： 2024-11-16 03:42:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管开关功率放大器光电二极管PC
页数 文件大小 规格书
3页 122K
描述
Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Small Power Amplifier Applications

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中文翻译

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HN1A07F 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.4
Is Samacsys：N最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：25JESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

HN1A07F 数据手册

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HN1A07F  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
HN1A07F  
Audio Frequency Small Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching applications  
z
Excellent Currrent gain(hFE )linearity  
: hFE(2) =25 (Min.) at VCE = −6V IC = −400mA  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
−50  
−50  
V
V
CBO  
CEO  
EBO  
−5  
V
1.EMITTER1  
2.BASE1  
3.COLLECTOR2 (C2)  
4.EMITTER2  
5.BASE2  
6.COLLECTOR1 (C1)  
(E1)  
(B1)  
−500  
−100  
300  
I
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
(E2)  
(B2)  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
150  
T
j
JEDEC  
JEITA  
―
―
−55~150  
T
stg  
TOSHIBA  
2-3N1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.015mg(typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*Total rating. Power dissipation per element should not exceed 200mW.  
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)  
Characteristic  
Symbol  
Test Condition  
= −50V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
V
V
―
―
70  
25  
―
―
―
―
−100  
−100  
240  
―
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
E
I
= −5V, I = 0  
C
EBO  
h
h
= −1V, I = −100mA  
C
FE(1)  
FE(2)  
DC current gain  
= −1V, I = −400mA  
C
Collector-emitter  
saturation voltage  
V
I
= −100mA, I = −10mA  
―
−0.1  
−0.25  
V
CE (sat)  
C
B
Base-Emitter voltage  
V
V
V
V
= −1V, I = −100mA  
―
―
―
−0.8  
200  
13  
−1.0  
―
V
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= −6V, I = −20mA  
MHz  
pF  
T
C
Collector output capacitance  
C
= −6V, I = 0, f = 1MHz  
―
ob  
E
Marking  
Equivalent Circuit (Top View)  
47  
1
2007-11-22  
123

中文翻译

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