是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | LEAD FREE, 2-1F1D, FS6, 6 PIN | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.52 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.05 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
HN1A26FS-GR(TPL3) | TOSHIBA | TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),TSOP |
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HN1A26FS-Y | TOSHIBA | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1F1D, F |
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HN1B01F | TOSHIBA | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
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HN1B01F_07 | TOSHIBA | Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applica |
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HN1B01FDW1T1 | ONSEMI | Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount |
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HN1B01FDW1T1/D | ETC | Complementary Dual General Purpose Amplifier Transistor |
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