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HN1A26FS-GR(TPL3) PDF预览

HN1A26FS-GR(TPL3)

更新时间： 2024-11-16 21:21:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 149K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

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HN1A26FS-GR(TPL3) 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
最大集电极电流 (IC)：0.1 A配置：Single
最小直流电流增益 (hFE)：200最高工作温度：150 °C
极性/信道类型：PNP最大功率耗散 (Abs)：0.05 W
子类别：Other Transistors表面贴装：YES
标称过渡频率 (fT)：80 MHzBase Number Matches：1

HN1A26FS-GR(TPL3) 数据手册

 浏览型号HN1A26FS-GR(TPL3)的Datasheet PDF文件第2页浏览型号HN1A26FS-GR(TPL3)的Datasheet PDF文件第3页 
HN1A26FS  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
HN1A26FS  
Frequency General-Purpose Amplifier Applications  
Unit: mm  
•
Two devices are incorporated into a fine-pitch, small-mold (6-pin)  
1.0±0.05  
0.8±0.05  
package.  
0.1±0.05  
0.1±0.05  
•
•
•
•
High voltage: V  
= −50 V  
CEO  
High current: I = −100 mA (max)  
C
1
6
5
High h  
: h = 120 to 400  
FE  
FE  
Excellent h linearity  
FE  
2
: h (I = −0.1 mA)/h (I = −2 mA) = 0.95 (typ.)  
FE  
C
FE  
C
4
3
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
1.EMITTER1  
2.BASE1  
(E1)  
(B1)  
−5  
V
3.COLLECTOR2 (C2)  
I
−100  
−30  
mA  
mA  
mW  
°C  
°C  
C
4.EMITTER2  
(E2)  
5.BASE2  
6.COLLECTOR1 (C1)  
(B2)  
fS6  
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
C
50  
T
j
150  
JEDEC  
JEITA  
―
―
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-1F1D  
Weight: 0.001g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating.  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Collector cutoff current  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
I
V
V
V
⎯
⎯
⎯
⎯
−0.1  
−0.1  
400  
−0.3  
⎯
μA  
μA  
⎯
CBO  
CB  
EB  
CE  
E
Emitter cutoff current  
I
= −5 V, I = 0  
C
EBO  
DC current gain  
h
(Note)  
FE  
= −6 V, I = −2 mA  
120  
―
⎯
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −100 mA, I = −10 mA  
−0.18  
⎯
V
CE (sat)  
C
B
f
V
V
= −10 V, I = −1 mA  
80  
⎯
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
1.6  
⎯
ob  
E
Note: h Classification  
Y (F): 120 to 140, GR (H): 200 to 400  
FE  
(
) Marking symbol  
Equivalent Circuit (top view)  
Marking  
6
5
4
Type Name  
Rank  
h
FE  
Q2  
8F  
Q1  
1
3
2
1
2008-12-01  
123

中文翻译

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