HN1A26FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A26FS
Frequency General-Purpose Amplifier Applications
Unit: mm
•
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
1.0±0.05
0.8±0.05
package.
0.1±0.05
0.1±0.05
•
•
•
•
High voltage: V
= −50 V
CEO
High current: I = −100 mA (max)
C
1
6
5
High h
: h = 120 to 400
FE
FE
Excellent h linearity
FE
2
: h (I = −0.1 mA)/h (I = −2 mA) = 0.95 (typ.)
FE
C
FE
C
4
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−50
−50
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
1.EMITTER1
2.BASE1
(E1)
(B1)
−5
V
3.COLLECTOR2 (C2)
I
−100
−30
mA
mA
mW
°C
°C
C
4.EMITTER2
(E2)
5.BASE2
6.COLLECTOR1 (C1)
(B2)
fS6
Base current
I
B
Collector power dissipation
Junction temperature
Storage temperature range
P (Note 1)
C
50
T
j
150
JEDEC
JEITA
―
―
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-1F1D
Weight: 0.001g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Symbol
Test Condition
= −50 V, I = 0
Min
Typ.
Max
Unit
I
V
V
V
⎯
⎯
⎯
⎯
−0.1
−0.1
400
−0.3
⎯
μA
μA
⎯
CBO
CB
EB
CE
E
Emitter cutoff current
I
= −5 V, I = 0
C
EBO
DC current gain
h
(Note)
FE
= −6 V, I = −2 mA
120
―
⎯
C
Collector-emitter saturation voltage
Transition frequency
V
I
= −100 mA, I = −10 mA
−0.18
⎯
V
CE (sat)
C
B
f
V
V
= −10 V, I = −1 mA
80
⎯
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= −10 V, I = 0, f = 1 MHz
1.6
⎯
ob
E
Note: h Classification
Y (F): 120 to 140, GR (H): 200 to 400
FE
(
) Marking symbol
Equivalent Circuit (top view)
Marking
6
5
4
Type Name
Rank
h
FE
Q2
8F
Q1
1
3
2
1
2008-12-01