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HN1A02F-Y PDF预览

HN1A02F-Y

更新时间： 2024-11-16 21:12:07
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
3页 139K
描述
TRANSISTOR 800 mA, 15 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN, BIP General Purpose Small Signal

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HN1A02F-Y 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.77最大集电极电流 (IC)：0.8 A
集电极-发射极最大电压：15 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-G6
JESD-609代码：e0元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：120 MHz
Base Number Matches：1

HN1A02F-Y 数据手册

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HN1A02F  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
HN1A02F  
Audio Frequency Power Amplifier Applications  
Unit: mm  
Switching applications  
z High hFE : hFE(1) = 120 to 400  
z Low VCE(sat.) : V  
= −0.2 V (max) (I = −400 mA, I = −8 mA)  
C B  
CE (sat)  
z Small Power Motor Driver Application.  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Rating  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
−15  
−15  
V
−5  
V
−800  
−160  
300  
1.EMITTER1  
2.BASE1  
3.COLLECTOR2 (C2)  
4.EMITTER2  
5.BASE2  
6.COLLECTOR1 (C1)  
(E1)  
(B1)  
I
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
(E2)  
(B2)  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
150  
T
j
−55 to 150  
T
stg  
JEDEC  
EIAJ  
―
―
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
TOSHIBA  
2-3N1A  
Weight: 0.015mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*Total rating. Power dissipation per element should not exceed 200mW.  
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= −15V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
―
V
V
―
―
―
―
−100  
−100  
―
nA  
nA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
―
= −5V, I = 0  
C
EBO  
Collector-Emitter Brakedown Voltage  
V
I
C
= −10mA,I = 0  
−15  
120  
40  
―
(BR)CEO  
B
h
―
―
V
V
= −1V, I = −100mA  
―
400  
―
FE(1) (Note)  
CE  
CE  
C
DC current gain  
h
= −1V, I = −800mA  
―
FE(2)  
C
Collector-emitter saturation voltage  
Base-Emitter voltage  
V
I
= −400mA, I = −8mA  
―
―
−0.2  
−0.8  
―
V
V
CE (sat)  
C
B
V
V
V
V
= −5V, I = −10mA  
−0.5  
―
―
BE  
CE  
CE  
CB  
C
Transition frequency  
f
―
―
= −5V, I = −10mA  
120  
13  
MHz  
pF  
T
C
Collector output capacitance  
C
= −10V, I = 0, f = 1MHz  
―
―
ob  
E
Note: hFE Classification Y (Y): 120 to 240, GR (G): 200 to 400  
( ) Marking Symbol  
Marking  
Equivalent Circuit (Top View)  
26  
Start of commercial production  
2000-02  
1
2014-03-01  
123

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