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FZT758TC PDF预览

FZT758TC

更新时间: 2024-11-21 19:48:15
品牌 Logo 应用领域
捷特科 - ZETEX 开关光电二极管晶体管
页数 文件大小 规格书
2页 94K
描述
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

FZT758TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.19
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
基于收集器的最大容量:20 pF集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

FZT758TC 数据手册

 浏览型号FZT758TC的Datasheet PDF文件第2页 
SOT223 PNP SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
ISSUE 2 – FEBRUARY 1995  
FZT758  
FEATURES  
C
*
*
*
400 Volt VCEO  
0.5 Amp continuous current  
Low saturation voltage  
E
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FZT658  
FZT758  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-400  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-400  
V
-5  
V
Peak Pulse Current  
-1  
-500  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
mA  
W
°C  
Ptot  
2
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
SYMBOL MIN.  
V(BR)CBO -400  
PARAMETER  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
VCEO(SUS) -400  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
-5  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
-100  
-100  
-100  
nA  
nA  
nA  
VCB=-320V  
VCE=-320V  
VEB=-4V  
ICES  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.30  
-0.25  
-0.50  
V
V
V
IC=-20mA, IB=-1mA  
IC=-50mA, IB=-5mA*  
IC=-100mA, IB=-10mA*  
Base-Emitter Saturation  
Voltage  
VBE(sat)  
-0.9  
V
IC=-100mA, IB=-10mA*  
Base-Emitter Turn On Voltage  
VBE(on)  
hFE  
-1.0  
V
IC=-100mA, VCE=-5V*  
Static Forward Current  
Transfer Ratio  
50  
50  
40  
IC=-1mA, VCE=-5V  
IC=-100mA, VCE=-5V*  
IC=-200mA, VCE=-10V*  
Transition Frequency  
fT  
50  
MHz  
pF  
IC=-20mA, VCE=-20V  
f=20MHz  
Output Capacitance  
Switching times  
Cobo  
20  
VCB=-20V, f=1MHz  
ton  
toff  
140 Typical ns  
2000 Typical ns  
IC=-100mA, VCC=-100V  
IB1=10mA, IB2=-20mA  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 242  

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