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FZT560 PDF预览

FZT560

更新时间: 2024-09-15 11:57:07
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美台 - DIODES 晶体晶体管功率双极晶体管光电二极管高压局域网
页数 文件大小 规格书
2页 52K
描述
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FZT560 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-223
包装说明:SOT-223, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.19
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:500 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

FZT560 数据手册

 浏览型号FZT560的Datasheet PDF文件第2页 
SOT223 PNP SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
FZT560  
ISSUE 1– NOVEMBER 1998  
FEATURES  
C
*
*
*
500 Volt VCEO  
150mA continuous current  
Ptot = 2 Watt  
E
C
B
PARTMARKING DETAIL –  
FZT560  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-500  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-500  
V
-5  
-500  
V
Peak Pulse Current  
mA  
mA  
W
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
-150  
Ptot  
2
Tj:Tstg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO -500  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
VCEO(SUS) -500  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
-5  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
-100  
-100  
-100  
nA  
nA  
nA  
VCB=-500V  
ICES  
VCE=-500V  
IEBO  
VEB=-5V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.20  
-0.5  
V
V
IC=-20mA, IB=-2mA  
IC=-50mA, IB=-10mA*  
Base-Emitter Saturation  
Voltage  
VBE(sat)  
-0.9  
V
IC=-50mA, IB=-10mA*  
Base-Emitter Turn On Voltage  
VBE(on)  
hFE  
-0.9  
V
IC=-50mA, VCE=-10V*  
Static Forward Current  
Transfer Ratio  
100  
300  
300  
IC=-1mA, VCE=-10V  
IC=-50mA, VCE=-10V*  
IC=-100mA, VCE=-10V*  
80  
15 typ  
Transition Frequency  
fT  
60  
MHz  
pF  
IC=-10mA, VCE=-20V  
f=50MHz  
Output Capacitance  
Switching times  
Cobo  
8
VCB=-20, f=1MHz  
ton  
toff  
110 typ.  
1.5 typ  
ns  
µs  
VCE=-100, IC=-50mA,  
I
B1=-5mA,IB2=10mA,  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  

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