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FZT591

更新时间: 2024-11-18 12:33:39
品牌 Logo 应用领域
TYSEMI PC
页数 文件大小 规格书
1页 77K
描述
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A

FZT591 数据手册

  
Product specification  
FZT591  
SOT-223  
Unit: mm  
+0.2  
+0.2  
3.50-0.2  
6.50-0.2  
Features  
Power Collector dissipation: PC=2W  
+0.2  
0.90-0.2  
+0.1  
Continuous Collector Current: IC=-1A  
3.00-0.1  
+0.3  
7.00-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
3 Emitter  
0.70-0.1  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-80  
Collector-emitter voltage  
-60  
V
Emitter-base voltage  
-5  
V
Continuous Collector Current  
Peak collector current  
-1  
A
ICM  
-2  
2
A
Power Collector dissipation  
Operating and storage temperature range  
PC  
W
Tj,Tstg  
-55 to +150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditons  
Min  
-80  
-60  
-5  
Typ Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector cutoff current  
V(BR)CBO IC=-100μA  
V(BR)CEO IC=-10mA  
V(BR)EBO IE=-100μA  
V
V
ICBO  
IEBO  
VCB=-60V, IE=0  
VEB=-4V, IC=0  
-100  
-100  
-0.6  
-1.2  
-1.0  
nA  
nA  
V
Emitter cut-off current  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Base-emitter voltage *  
VCE(sat) IC=-1A,IB=-100mA  
VBE(sat) IC=-1A,IB=-100mA  
VBE(ON) IC=-1A,VCE=-5V  
IC=-1mA, VCE=-5V*  
V
V
100  
100  
80  
IC=-500mA,VCE=-5V  
hFE  
300  
DC current gain  
IC=-1A, VCE=-5V*  
IC=-2A, VCE=-5V*  
15  
Transition frequecy  
Output capacitance  
fT  
IC=-50mA,VCE=-10V,f=100MHz  
VCB=-10V,f=1MHz  
150  
MHz  
pF  
Cob  
10  
* Pulse test: tp 300 μs; d 0.02.  
Marking  
Marking  
591  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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