FZT589TC

更新时间： 2024-11-04 13:07:55

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FZT589TC 数据手册

SOT223 PNP SILICON PLANAR MEDIUM POWER

HIGH PERFORMANCE TRANSISTOR

FZT589

ISSUE 2 - OCTOBER 1995

PARTMARKING DETAILS -

FZT589

COMPLEMENTARY TYPES - FZT489

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-50

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Peak Pulse Current

-2

Continuous Collector Current

Base Current

I_C

-1

-200

I_B

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

-50

-30

-5

I_C=-100µA

Collector-Emitter

Breakdown Voltage

I_C=-1mΑ

Emitter-Base

Breakdown Voltage

I_E=-100µA

Collector Cut-Off Current

Collector Emitter Cut-Off Current

Emitter Cut-Off Current

I_CBO

-100

V_CB=-30V

V_CES=-30V

V_EB=-4V

I_CES

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.35

-0.65

I_C=-1A, I_B=-100mA*

I_C=-2A, I_B=-200mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-1.2

I_C=-1A, I_B=-100mA*

I_C=-1A, V_CE=-2V*

I_C=-1mA, V_CE=-2V*

I_C=-500mA, V_CE=-2V*

I_C=-1A, V_CE=-2V*

I_C=-2A, V_CE=-2V*

Base-Emitter

Turn-On Voltage

-1.1

Static Forward

Current Transfer Ratio

100

300

Transition Frequency

Output Capacitance

f_T

100

MHz

I_C=-100mA, V_CE=-5V

f=100MHz

C_obo

V_CB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT549 datasheet

3 - 194

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FZT589TC 替代型号

型号	品牌	替代类型	描述	数据表
FZT589TA	DIODES	功能相似	Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4

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