FZT591AQTA

更新时间： 2024-11-06 13:07:55

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FZT591AQTA 数据手册

SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

FZT591

ISSUE 3 - NOVEMBER 1995

✪

COMPLEMENTARY TYPE FZT491

PARTMARKING DETAIL - FZT591

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-60

-5

Peak Pulse Current

-2

Continuous Collector Current

Base Current

I_C

-1

-200

I_B

°C

Power Dissipation at T_amb=25°C

P_tot

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNITCONDITIONS.

Breakdown Voltages

V_(BR)CBO-80

V_(BR)CEO-60

V_(BR)EBO-5

I_CBO

I_C=-100µA, I_E=0

I_C=-10mA, I_B=0*

I_E=-100µA, I_C=0

Collector Cut-Off Current

Emitter Cut-Off Current

-100

nA V_CB=-60V

I_EBO

nA V_EB=-4V, I_C=0

nA V_CES=-60V

Collector-Emitter Cut-Off Current

Emitter Saturation Voltages

I_CES

V_CE(sat)

-0.3

-0.6

I_C=-500mA,I_B=-50mA*

I_C=-1A, I_B=-100mA*

V_BE(sat)

V_BE(on)

-1.2

-1.0

I_C=-1A, I_B=-100mA*

I_C=-1A, V_CE=-5V*

Base-Emitter Turn-on Voltage

Static Forward Current Transfer

Ratio

h_FE

100

I_C=-1mA, V_CE=-5V*

I_C=-500mA, V_CE=-5V*

I_C=-1A, V_CE=-5V*

I_C=-2A, V_CE=-5V*

300

Transition Frequency

Output Capacitance

f_T

150

MHz I_C=-50mA, V_CE=-10V

f=100MHz

C_obo

pF V_CB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT591 datasheet

3 - 195

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