Datasheet > FZT591

FZT591

更新时间： 2024-11-02 18:09:47

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科信 - KEXIN		/
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1页	332K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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FZT591 数据手册

SMD Type

Transistors

PNP Transistors

FZT591 (KZT591)

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

■ Features

● Collector Current Capability IC=-1A

● Collector Emitter Voltage V^CEO=-60V

● Complementary to FZT491

0.250

2.30 (typ)

Gauge Plane

1.Base

2.Collector

0.70±0.1

3.Emitter

4.60 (typ)

4.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-80

-60

-5

Collector Current - Continuous

Collector Current - Pulse

Base Current

-1

-2

-200

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-80

-60

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -10 mA， I

= -100μA， I

CB= -60 V , I =0

CES =-60V,I =0

EB= -4V , I =0

=-500mA, I =-50mA (Note.1)

CBO

CES

EBO

-0.1

-0.3

-0.6

-1.2

-1

Collector-emitter saturation voltage

CE(sat)

=-1 A, I

=-100mA (Note.1)

Base - emitter saturation voltage

Base-Emitter Turn-On Voltage

BE(sat)

BE(on)

CE= -5V, I

^CE= -5V, I

= -1A (Note.1)

FE(1)

FE(2)

FE(3)

FE(4)

= -1mA

100

= -500mA

= -1 A

300

DC current gain

(Note.1)

= -2 A

Collector output capacitance

Transition frequency

Cob

^CB= -10V, f=1MHz

^CE= -10V, I = -50mA,f=100MHz

150

MHz

Note.1: Pulse width=300us. Duty cycle ≤ 2%

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