FZT560QTC

更新时间： 2024-11-21 13:07:55

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FZT560QTC 数据手册

SOT223 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

FZT560

ISSUE 1– NOVEMBER 1998

FEATURES

500 Volt V_CEO

150mA continuous current

P_tot= 2 Watt

PARTMARKING DETAIL –

FZT560

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-500

Collector-Emitter Voltage

Emitter-Base Voltage

-500

-5

-500

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

-150

P_tot

T_j:T_stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO-500

I_C=-100µA

I_C=-10mA*

I_E=-100µA

Collector-Emitter

Breakdown Voltage

V_CEO(SUS)-500

Emitter-Base Breakdown

Voltage

V_(BR)EBO

-5

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

-100

V_CB=-500V

I_CES

V_CE=-500V

I_EBO

V_EB=-5V

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.20

-0.5

I_C=-20mA, I_B=-2mA

I_C=-50mA, I_B=-10mA*

Base-Emitter Saturation

Voltage

V_BE(sat)

-0.9

I_C=-50mA, I_B=-10mA*

Base-Emitter Turn On Voltage

V_BE(on)

h_FE

-0.9

I_C=-50mA, V_CE=-10V*

Static Forward Current

Transfer Ratio

100

300

I_C=-1mA, V_CE=-10V

I_C=-50mA, V_CE=-10V*

I_C=-100mA, V_CE=-10V*

15 typ

Transition Frequency

f_T

MHz

I_C=-10mA, V_CE=-20V

f=50MHz

Output Capacitance

Switching times

C_obo

V_CB=-20, f=1MHz

t_on

t_off

110 typ.

1.5 typ

µs

V_CE=-100, I_C=-50mA,

_B1=-5mA,I_B2=10mA,

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

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