Datasheet > FZT591A

FZT591A

更新时间： 2024-11-22 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	55K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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FZT591A 数据手册

SMD Type

TransistIoCrs

PNP Silicon Planar Medium Power Transistor

FZT591A

SOT-223

Unit: mm

+0.2

3.50_-0.2

6.50_-0.2

■Features

●Power Collector dissipation: PC=2W

+0.2

0.90_-0.2

+0.1

● Continuous Collector Current: IC=-1A

3.00_-0.1

+0.3

7.00_-0.3

1 Base

2 Collector

3 Emitter

4 Collector

+0.1

0.70_-0.1

2.9

4.6

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

-40

Collector-emitter voltage

-40

Emitter-base voltage

-5

Continuous Collector Current

Peak collector current

-1

ICM

-2

Power Collector dissipation

Operating and storage temperature range

℃

Tj,Tstg

-55 to +150

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditons

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

V(BR)CBO IC=-100μA

V(BR)CEO IC=-10mA

V(BR)EBO IE=-100μA

-40

-5

ICBO

IEBO

VCB=-30V, IE=0

VEB=-4V, IC=0

-100

-0.5

-1.1

-1.0

Emitter cut-off current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

VCE(sat) IC=-1A,IB=-100mA

VBE(sat) IC=-1A,IB=-50mA

VBE(ON) IC=-1A,VCE=-5V

IC=-1mA, VCE=-5V*

300

250

160

150

IC=-100mA,VCE=-5V

hFE

800

DC current gain

IC=-500mA, VCE=-5V*

IC=-1A, VCE=-5V*

Transition frequecy

Output capacitance

IC=-50mA,VCE=-10V,f=100MHz

VCB=-10V,f=1MHz

MHz

Cob

* Pulse test: tp ≤300 μs; d ≤0.02.

■ Marking

Marking

591A

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中文翻译

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