Datasheet > FZT591Q

FZT591Q

更新时间： 2024-11-07 14:54:39

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	1112K
描述
功率三极管

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中文翻译

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数据手册

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FZT591Q 数据手册

FZT591Q-HAF

PNP Silicon Epitaxial Planar Power Transistor

Features

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Base 2.Collector 3.Emitter 4.Collector

SOT-223 Plastic Package

Absolute Maximum Ratings (T_a= 25

Parameter

unless otherwise specified)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_B

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Base Current - Continuous

Collector Current

200

-I_C

Peak Collector Current, Pulsed

-I_CM

1.2 ¹⁾

2 ²⁾

Total Power Dissipation

P_D

T_j, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

104 ¹⁾

62.5 ²⁾

Unit

Thermal Resistance from Junction to Ambient

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 20/06/2023 Rev: 02

12 3 4 5

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