Datasheet > FS75R07W2E3B11ABOMA1

FS75R07W2E3B11ABOMA1

更新时间： 2024-11-03 08:07:43

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
9页	525K
描述
Insulated Gate Bipolar Transistor, 95A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-35

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FS75R07W2E3B11ABOMA1 数据手册

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Technische Information / technical information

IGBT-Module

IGBT-modules

FS75R07W2E3_B11A

EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC

EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

V†Š» = 650V

I† ÒÓÑ = 75A / I†ç¢ = 150A

Typische Anwendungen

Typical Applications

Hybrid-Elektrofahrzeuge (H)EV

Klimaanlagen

Hybrid Electrical Vehicles (H)EV

Air Conditioning

•

Motorantriebe

Motor Drives

Elektrische Eigenschaften

Electrical Features

Erhöhte Sperrspannungsfestigkeit auf 650V

Niedrige Schaltverluste

Niedriges V†ŠÙÈÚ

Increased blocking voltage capability to 650V

Low Switching Losses

Low V†ŠÙÈÚ

•

Trench IGBT 3

Mechanische Eigenschaften

Mechanical Features

AlèOé Substrat mit kleinem thermischen

Widerstand

AlèOé Substrate with Low Thermal Resistance

•

Hohe Leistungsdichte

High Power Density

•

Integrierter NTC Temperatur Sensor

Kompaktes Design

Integrated NTC temperature sensor

Compact design

PressFIT Verbindungstechnik

RoHS konform

PressFIT Contact Technology

RoHS compliant

Robuste Montage durch integrierte

Befestigungsklammern

Rugged mounting due to integrated mounting

clamps

Module Label Code

Barcode Code 128

Content of the Code

Digit

Module Serial Number

1 - 5

Module Material Number

Production Order Number

Datecode (Production Year)

Datecode (Production Week)

6 - 11

12 - 19

20 - 21

22 - 23

DMX - Code

prepared by: SS

approved by: TR

date of publication: 2012-01-27

revision: 3.0

material no: 35375

12 3 4 5 6 7...9

中文翻译

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