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FS75R12KE3BOSA1 PDF预览

FS75R12KE3BOSA1

更新时间: 2024-11-02 21:16:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
9页 185K
描述
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-28

FS75R12KE3BOSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:2.08
外壳连接:ISOLATED最大集电极电流 (IC):105 A
集电极-发射极最大电压:1200 V配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码:R-XUFM-X28元件数量:6
端子数量:28最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):610 ns
标称接通时间 (ton):340 nsBase Number Matches:1

FS75R12KE3BOSA1 数据手册

 浏览型号FS75R12KE3BOSA1的Datasheet PDF文件第2页浏览型号FS75R12KE3BOSA1的Datasheet PDF文件第3页浏览型号FS75R12KE3BOSA1的Datasheet PDF文件第4页浏览型号FS75R12KE3BOSA1的Datasheet PDF文件第5页浏览型号FS75R12KE3BOSA1的Datasheet PDF文件第6页浏览型号FS75R12KE3BOSA1的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FS75R12KE3  
Höchstzulässige Werte / maximum rated values  
Elektrische Eigenschaften / electrical properties  
Kollektor Emitter Sperrspannung  
collector emitter voltage  
Tvj= 25°C  
VCES  
1200  
V
75  
105  
A
A
Kollektor Dauergleichstrom  
DC collector current  
Tc= 80°C  
Tc= 25°C  
IC, nom  
IC  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tp= 1ms, Tc= 80°C  
ICRM  
150  
350  
+20  
75  
A
W
V
Gesamt Verlustleistung  
total power dissipation  
Tc= 25°C; Transistor  
Ptot  
Gate Emitter Spitzenspannung  
gate emitter peak voltage  
VGES  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
tp= 1ms  
IFRM  
150  
1200  
2,5  
A
repetitive peak forward current  
Grenzlastintegral  
I²t value  
VR= 0V, tp= 10ms, Tvj= 125°C  
RMS, f= 50Hz, t= 1min:  
I²t  
A²s  
kV  
Isolations Prüfspannung  
insulation test voltage  
VISOL  
Charakteristische Werte / characteristic values  
Transistor Wechselrichter / transistor inverter  
min.  
-
typ.  
1,7  
2,0  
max.  
2,15  
-
IC= 75A, VGE= 15V, Tvj= 25°C  
V
V
Kollektor Emitter Sättigungsspannung  
VCEsat  
VGE(th)  
QG  
collector emitter saturation voltage  
IC= 75A, VGE= 15V, Tvj= 125°C  
-
Gate Schwellenspannung  
gate threshold voltage  
IC= 3,0mA, VCE= VGE, Tvj= 25°C  
5,0  
5,8  
0,7  
5,3  
0,2  
-
6,5  
V
Gateladung  
gate charge  
VGE= -15V...+15V  
µC  
nF  
nF  
mA  
nA  
-
-
-
-
-
-
-
Eingangskapazität  
input capacitance  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
VCE= 1200V, VGE= 0V, Tvj= 25°C  
VCE= 0V, VGE= 20V, Tvj= 25°C  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
-
Kollektor Emitter Reststrom  
collector emitter cut off current  
ICES  
5
Gate Emitter Reststrom  
gate emitter leakage current  
IGES  
-
400  
prepared by: MOD-D2; M. Münzer  
approved: SM TM; Robert Severin  
date of publication: 2002-09-03  
revision: 3.0  
DB_FS75R12KE3_3.0 .xls  
2002-09-03  
1 (8)  

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