Datasheet > FS75R12KE3G_03

FS75R12KE3G_03

更新时间： 2024-11-02 12:20:19

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
8页	352K
描述
IGBT-modules

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FS75R12KE3G_03 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS75R12KE3G

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C

T† = 25°C

I† ÒÓÑ

I†

100

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms, T† = 80°C

T† = 25°C

I†ç¢

PÚÓÚ

150

355

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 75 A, V•Š = 15 V, TÝÎ = 25°C

I† = 75 A, V•Š = 15 V, TÝÎ = 125°C

V†Š ÙÈÚ

1,70 2,15

2,00

Gate-Schwellenspannung

gate threshold voltage

I† = 3,00 mA, V†Š = V•Š, TÝÎ = 25°C

V•ŠÚÌ

Q•

5,0

5,8

0,70

6,5

µC

Gateladung

gate charge

V•Š = -15 V ... +15 V

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

5,30

0,20

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 75 A, V†Š = 600 V

V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 125°C

tÁ ÓÒ

tØ

0,26

0,29

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 75 A, V†Š = 600 V

V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 125°C

0,03

0,05

µs

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 75 A, V†Š = 600 V

V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 125°C

tÁ ÓËË

tË

0,42

0,52

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 75 A, V†Š = 600 V

V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 125°C

0,07

0,09

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 75 A, V†Š = 600 V, L» = 70 nH

V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 125°C

EÓÒ

EÓËË

7,00

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 75 A, V†Š = 600 V, L» = 70 nH

V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 125°C

9,50

300

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

0,35 K/W

prepared by: Mark Münzer

approved by: Robert Severin

date of publication: 2003-6-26

revision: 3.1

12 3 4 5 6 7 8

中文翻译

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与FS75R12KE3G_03相关器件

型号	品牌	获取价格	描述	数据表
FS75R12KS4	EUPEC	获取价格	IGBT-modules
FS75R12KS4	INFINEON	获取价格	EconoPACK? 3 1200V 六单元 IGBT 模块，采用支持高频开关的第二代快速
FS75R12KS4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-39
FS75R12KT3	EUPEC	获取价格	EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS75R12KT3	INFINEON	获取价格	EconoPACK™2 1200 V, 75 A sixpack IGBT module
FS75R12KT3BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-28
FS75R12KT3G	EUPEC	获取价格	EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS75R12KT3G	INFINEON	获取价格	EconoPACK?3 1200 V 75 A 六单元 IGBT 模块，配备第三代沟槽栅/
FS75R12KT3GBOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-35
FS75R12KT4	INFINEON	获取价格	EconoPACK? 2?1200 V, 75 A sixpack?IGBT module?with fast TRENCHSTOP? IGBT4, Emitter Control

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