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FS75R12KT3 PDF预览

FS75R12KT3

更新时间: 2024-11-25 11:16:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网双极性晶体管
页数 文件大小 规格书
8页 452K
描述
EconoPACK™2 1200 V, 75 A sixpack IGBT module with fast TRENCHSTOP™ IGBT3, Emitter Controlled  HE diode and NTC.

FS75R12KT3 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X28
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.05
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):105 A集电极-发射极最大电压:1200 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X28元件数量:6
端子数量:28最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):355 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):610 ns
标称接通时间 (ton):340 nsVCEsat-Max:2.15 V
Base Number Matches:1

FS75R12KT3 数据手册

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TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation  
IGBT-Module  
IGBT-modules  
FS75R12KT3  
EconoPACK™2ꢀModulꢀmitꢀschnellemꢀTrench/FeldstopꢀIGBT3ꢀundꢀHighꢀEfficiencyꢀDiodeꢀ  
EconoPACK™2ꢀwithꢀfastꢀtrench/fieldstopꢀIGBT3ꢀandꢀEmitterꢀControlledꢀHighꢀEfficiencyꢀdiodeꢀ  
VorläufigeꢀDaten  
PreliminaryꢀData  
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter  
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues  
Kollektor-Emitter-Sperrspannung  
Collector-emitterꢀvoltage  
Tvj = 25°C  
VCES  
1200  
V
Kollektor-Dauergleichstrom  
ContinuousꢀDCꢀcollectorꢀcurrent  
TC = 80°C, Tvj max = 150°C  
TC = 25°C, Tvj max = 150°C  
IC nom  
IC  
75  
105  
A
A
PeriodischerꢀKollektor-Spitzenstrom  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
tP = 1 ms  
ICRM  
Ptot  
150  
355  
A
Gesamt-Verlustleistung  
Totalꢀpowerꢀdissipation  
TC = 25°C, Tvj max = 150  
W  
Gate-Emitter-Spitzenspannung  
Gate-emitterꢀpeakꢀvoltage  
VGES  
+/-20  
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
Kollektor-Emitter-Sättigungsspannung  
Collector-emitterꢀsaturationꢀvoltage  
IC = 75 A, VGE = 15 V  
IC = 75 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
1,70 2,15  
1,90  
V
V
VCE sat  
VGEth  
QG  
Gate-Schwellenspannung  
Gateꢀthresholdꢀvoltage  
IC = 3,00 mA, VCE = VGE, Tvj = 25°C  
VGE = -15 V ... +15 V  
5,0  
5,8  
0,70  
10  
6,5  
V
µC  
Gateladung  
Gateꢀcharge  
InternerꢀGatewiderstand  
Internalꢀgateꢀresistor  
Tvj = 25°C  
RGint  
Cies  
Eingangskapazität  
Inputꢀcapacitance  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
VCE = 1200 V, VGE = 0 V, Tvj = 25°C  
VCE = 0 V, VGE = 20 V, Tvj = 25°C  
5,30  
0,20  
nF  
nF  
Rückwirkungskapazität  
Reverseꢀtransferꢀcapacitance  
Cres  
ICES  
IGES  
td on  
Kollektor-Emitter-Reststrom  
Collector-emitterꢀcut-offꢀcurrent  
5,0 mA  
Gate-Emitter-Reststrom  
Gate-emitterꢀleakageꢀcurrent  
400 nA  
µs  
Einschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGon = 4,7 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,26  
0,29  
µs  
Anstiegszeit,ꢀinduktiveꢀLast  
Riseꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGon = 4,7 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,03  
0,05  
µs  
µs  
tr  
td off  
tf  
Abschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGoff = 4,7 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,42  
0,52  
µs  
µs  
Fallzeit,ꢀinduktiveꢀLast  
Fallꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGoff = 4,7 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,07  
0,09  
µs  
µs  
EinschaltverlustenergieꢀproꢀPuls  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 75 A, VCE = 600 V, LS = 70 nH  
VGE = ±15 V  
RGon = 4,7 Ω  
Tvj = 25°C  
Tvj = 125°C  
mJ  
mJ  
Eon  
Eoff  
7,00  
8,10  
AbschaltverlustenergieꢀproꢀPuls  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
IC = 75 A, VCE = 600 V, LS = 70 nH  
VGE = ±15 V  
RGoff = 4,7 Ω  
Tvj = 25°C  
Tvj = 125°C  
mJ  
mJ  
Kurzschlußverhalten  
SCꢀdata  
VGE 15 V, VCC = 900 V  
VCEmax = VCES -LsCE ·di/dt  
ISC  
tP 10 µs, Tvj = 125°C  
300  
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
proꢀIGBTꢀ/ꢀperꢀIGBT  
RthJC  
RthCH  
Tvj op  
0,35 K/W  
K/W  
Wärmewiderstand,ꢀGehäuseꢀbisꢀKühlkörper proꢀIGBTꢀ/ꢀperꢀIGBT  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
0,19  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
TemperaturꢀimꢀSchaltbetrieb  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
125  
°C  
preparedꢀby:ꢀMK  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-10-03  
revision:ꢀ2.1  
1

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