是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X28 |
针数: | 28 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.05 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 105 A | 集电极-发射极最大电压: | 1200 V |
配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X28 | 元件数量: | 6 |
端子数量: | 28 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 355 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 610 ns |
标称接通时间 (ton): | 340 ns | VCEsat-Max: | 2.15 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS75R12KT3BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-28 | |
FS75R12KT3G | EUPEC |
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EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode | |
FS75R12KT3G | INFINEON |
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EconoPACK?3 1200 V 75 A 六单元 IGBT 模块,配备第三代沟槽栅/ | |
FS75R12KT3GBOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-35 | |
FS75R12KT4 | INFINEON |
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EconoPACK? 2?1200 V, 75 A sixpack?IGBT module?with fast TRENCHSTOP? IGBT4, Emitter Control | |
FS75R12KT4_B11 | INFINEON |
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IGBT- Wechselrichter / IGBT-inverter | |
FS75R12KT4_B15 | INFINEON |
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EconoPACK2 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode | |
FS75R12KT4B11BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-25 | |
FS75R12N2T7_B15 | INFINEON |
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Solder pin | |
FS75R12W2T4 | INFINEON |
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EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / |