5秒后页面跳转
捷配首页

Datasheet > FS75R12KT3G
FS75R12KT3G PDF预览

FS75R12KT3G

更新时间： 2024-11-02 10:24:43
品牌 Logo 应用领域
EUPEC 晶体二极管晶体管双极性晶体管栅局域网
页数 文件大小 规格书
8页 342K
描述
EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

阅读下载

中文翻译

获取价格

FS75R12KT3G 技术参数

生命周期：Transferred包装说明：MODULE-35
Reach Compliance Code：unknown风险等级：5.55
外壳连接：ISOLATED最大集电极电流 (IC)：100 A
集电极-发射极最大电压：1200 V配置：BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码：R-XUFM-X35元件数量：6
端子数量：35封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管元件材料：SILICON
标称断开时间 (toff)：610 ns标称接通时间 (ton)：340 ns
Base Number Matches：1

FS75R12KT3G 数据手册

 浏览型号FS75R12KT3G的Datasheet PDF文件第2页浏览型号FS75R12KT3G的Datasheet PDF文件第3页浏览型号FS75R12KT3G的Datasheet PDF文件第4页浏览型号FS75R12KT3G的Datasheet PDF文件第5页浏览型号FS75R12KT3G的Datasheet PDF文件第6页浏览型号FS75R12KT3G的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FS75R12KT3G  
EconoPACK™3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode  
EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
75  
100  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
150  
355  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 75 A, V•Š = 15 V  
I† = 75 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
1,70 2,15  
1,90  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 3,00 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
5,0  
5,8  
0,70  
10  
6,5  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
5,30  
0,20  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
tÁ ÓÒ  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,26  
0,29  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,03  
0,05  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,42  
0,52  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,07  
0,09  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V, L» = 70 nH  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓÒ  
7,00  
8,10  
300  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V, L» = 70 nH  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓËË  
Kurzschlussverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
0,35 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
RÚ̆™  
0,09  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Knecht  
approved by: Robert Severin  
date of publication: 2004-11-16  
revision: 2.1  
1
12345678

中文翻译

下载PDF

与FS75R12KT3G相关器件

型号 品牌 获取价格 描述 数据表
FS75R12KT3GBOSA1 INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-35
FS75R12KT4 INFINEON

获取价格

 		EconoPACK? 2?1200 V, 75 A sixpack?IGBT module?with fast TRENCHSTOP? IGBT4, Emitter Control
FS75R12KT4_B11 INFINEON

获取价格

 		IGBT- Wechselrichter / IGBT-inverter
FS75R12KT4_B15 INFINEON

获取价格

 		EconoPACK2 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
FS75R12KT4B11BOSA1 INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-25
FS75R12N2T7_B15 INFINEON

获取价格

 		Solder pin
FS75R12W2T4 INFINEON

获取价格

 		EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT /
FS75R12W2T4_B11 INFINEON

获取价格

 		EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
FS75R12W2T4B11BOMA1 INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel, MODULE-33
FS75R12W2T7 INFINEON

获取价格

 		EasyPACK??2B 1200 V,?75 A 六单元?IGBT模块，采用TRENCH

与FS75R12KT3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证