Datasheet > FS75R17KE3

FS75R17KE3

更新时间： 2024-11-02 03:09:11

品牌	Logo	应用领域
EUPEC		晶体晶体管双极性晶体管局域网
页数	文件大小	规格书
8页	341K
描述
IGBT-Module

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中文翻译

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技术参数
数据手册

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FS75R17KE3 技术参数

生命周期：	Transferred	包装说明：	MODULE-35
Reach Compliance Code：	unknown	风险等级：	5.64
Is Samacsys：	N	外壳连接：	ISOLATED
最大集电极电流 (IC)：	130 A	集电极-发射极最大电压：	1700 V
配置：	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	JESD-30 代码：	R-XUFM-X35
元件数量：	6	端子数量：	35
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
晶体管元件材料：	SILICON	标称断开时间 (toff)：	1100 ns
标称接通时间 (ton)：	450 ns	Base Number Matches：	1

FS75R17KE3 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS75R17KE3

Vorläufige Daten

preliminary data

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1700

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C

T† = 25°C

I† ÒÓÑ

I†

130

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms, T† = 80°C

T† = 25°C

I†ç¢

PÚÓÚ

150

465

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 75 A, V•Š = 15 V, TÝÎ = 25°C

I† = 75 A, V•Š = 15 V, TÝÎ = 125°C

V†Š ÙÈÚ

2,00 2,45

2,40

Gate-Schwellenspannung

gate threshold voltage

I† = 3,00 mA, V†Š = V•Š, TÝÎ = 25°C

V•ŠÚÌ

Q•

5,2

5,8

0,90

8,5

6,4

µC

Gateladung

gate charge

V•Š = -15 V ... +15 V

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

6,80

0,22

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 75 A, V†Š = 900 V

V•Š = ±15 V, R•ÓÒ = 6,8 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 6,8 Â, TÝÎ = 125°C

tÁ ÓÒ

tØ

0,37

0,40

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 75 A, V†Š = 900 V

V•Š = ±15 V, R•ÓÒ = 6,8 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 6,8 Â, TÝÎ = 125°C

0,04

0,05

µs

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 75 A, V†Š = 900 V

V•Š = ±15 V, R•ÓËË = 6,8 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 6,8 Â, TÝÎ = 125°C

tÁ ÓËË

tË

0,65

0,80

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 75 A, V†Š = 900 V

V•Š = ±15 V, R•ÓËË = 6,8 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 6,8 Â, TÝÎ = 125°C

0,18

0,30

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 75 A, V†Š = 900 V, L» = 30 nH

V•Š = ±15 V, R•ÓÒ = 6,8 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 6,8 Â, TÝÎ = 125°C

EÓÒ

EÓËË

16,5

24,0

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 75 A, V†Š = 900 V, L» = 30 nH

V•Š = ±15 V, R•ÓËË = 6,8 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 6,8 Â, TÝÎ = 125°C

16,0

23,5

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎù125°C, V†† = 1000 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

300

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

0,27 K/W

prepared by: Martin Wölz

date of publication: 2003-8-20

revision: 2.0

approved by: Wilhelm Rusche

12 3 4 5 6 7 8

中文翻译

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