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FS75R12KE3_B9 PDF预览

FS75R12KE3_B9

更新时间: 2024-11-24 12:20:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管双极性晶体管局域网
页数 文件大小 规格书
8页 277K
描述
IGBT-modules

FS75R12KE3_B9 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X26针数:26
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):105 A
集电极-发射极最大电压:1200 V配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X26
湿度敏感等级:1元件数量:6
端子数量:26最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):355 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):610 ns
标称接通时间 (ton):340 nsVCEsat-Max:2.15 V
Base Number Matches:1

FS75R12KE3_B9 数据手册

 浏览型号FS75R12KE3_B9的Datasheet PDF文件第2页浏览型号FS75R12KE3_B9的Datasheet PDF文件第3页浏览型号FS75R12KE3_B9的Datasheet PDF文件第4页浏览型号FS75R12KE3_B9的Datasheet PDF文件第5页浏览型号FS75R12KE3_B9的Datasheet PDF文件第6页浏览型号FS75R12KE3_B9的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FS75R12KE3_B9  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
chstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
75  
105  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
150  
355  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 75 A, V•Š = 15 V  
I† = 75 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
1,70 2,15  
2,00  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 3,00 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
5,0  
5,8  
0,70  
10  
6,5  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
5,30  
0,20  
nF  
nF  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
I†Š»  
I•Š»  
tÁ ÓÒ  
1,0 mA  
100 nA  
Gate-Emitter Reststrom  
gate-emitter leakage current  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,26  
0,29  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,03  
0,05  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,42  
0,52  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 75 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,07  
0,09  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 75 A, V†Š = 600 V, L» = 70 nH  
V•Š = ±15 V, di/dt = 2200 A/µs (TÝÎ=125°C) TÝÎ = 125°C  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
5,00  
7,50  
mJ  
mJ  
EÓÒ  
EÓËË  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 75 A, V†Š = 600 V, L» = 70 nH  
V•Š = ±15 V, du/dt = 3200 V/µs (TÝÎ=125°C) TÝÎ = 125°C  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
6,50  
9,50  
mJ  
mJ  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 900 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
t« ù 10 µs, TÝÎ = 125°C  
300  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
RÚ̆™  
0,35 K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
0,21  
K/W  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Christoph Messelke  
approved by: Robert Severin  
date of publication: 2007-06-28  
revision: 2.0  
1

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