是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X18 | 针数: | 22 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.58 | Samacsys Confidence: | 4 |
Samacsys Status: | Released | Samacsys PartID: | 1342393 |
Samacsys Pin Count: | 26 | Samacsys Part Category: | Integrated Circuit |
Samacsys Package Category: | Other | Samacsys Footprint Name: | FS50R06W1E3_B11-2 |
Samacsys Released Date: | 2020-03-02 16:14:10 | Is Samacsys: | N |
其他特性: | UL RECOGNIZED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 70 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X18 | 元件数量: | 6 |
端子数量: | 18 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 205 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 370 ns | 标称接通时间 (ton): | 250 ns |
VCEsat-Max: | 1.9 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS50R06W1E3BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22 | |
FS50R06YE3 | EUPEC |
获取价格 |
IGBT-modules | |
FS50R06YL4 | EUPEC |
获取价格 |
IGBT-Module | |
FS50R07N2E4 | INFINEON |
获取价格 |
EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC | |
FS50R07N2E4_B11 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-25 | |
FS50R07N2E4B11BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-25 | |
FS50R07N2E4BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
FS50R07U1E4 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FS50R07U1E4BPSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FS50R07W1E3_B11A | INFINEON |
获取价格 |
PressFIT |