Datasheet > FS50R06KE3

FS50R06KE3

更新时间： 2024-09-26 10:24:43

品牌	Logo	应用领域
EUPEC		二极管双极性晶体管
页数	文件大小	规格书
8页	308K
描述
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode

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中文翻译

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技术参数
数据手册

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FS50R06KE3 技术参数

生命周期：	Transferred	包装说明：	ECONOPACK-28
Reach Compliance Code：	unknown	风险等级：	5.58
外壳连接：	ISOLATED	最大集电极电流 (IC)：	70 A
集电极-发射极最大电压：	600 V	配置：	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码：	R-XUFM-X28	元件数量：	6
端子数量：	28	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	UNSPECIFIED
端子位置：	UPPER	晶体管元件材料：	SILICON
标称断开时间 (toff)：	265 ns	标称接通时间 (ton)：	43 ns
Base Number Matches：	1

FS50R06KE3 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS50R06KE3

EconoPACK™3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode

EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

600

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 175°C

T† = 25°C, TÝÎ = 175°C

I† ÒÓÑ

I†

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

100

190

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 175°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 50 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,45 1,90

1,60

1,70

Gate-Schwellenspannung

gate threshold voltage

I† = 0,80 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

4,9

5,8

0,50

0,0

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

3,10

0,095

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

1,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 50 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 8,2 Â

TÝÎ = 25°C

tÁ ÓÒ

0,023

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 50 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 8,2 Â

TÝÎ = 25°C

tØ

0,015

0,018

0,02

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 50 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 8,2 Â

TÝÎ = 25°C

tÁ ÓËË

0,18

0,20

0,205

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 50 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 8,2 Â

TÝÎ = 25°C

tË

0,055

0,06

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 50 A, V†Š = 300 V, L» = 30 nH

V•Š = ±15 V, dI/dt = 2800 A/µs (T=150°C)

R•ÓÒ = 8,2 Â

TÝÎ = 25°C

TÝÎ = 125°C

TÝÎ = 150°C

0,30

0,34

0,43

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 50 A, V†Š = 300 V, L» = 30 nH TÝÎ = 25°C

V•Š = ±15 V, dU/dt = 4200 V/µs (T=150°C) TÝÎ = 125°C

1,30

1,60

1,70

EÓËË

R•ÓËË = 8,2 Â

TÝÎ = 150°C

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 360 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

t« ù 8 µs, TÝÎ = 25°C

t« ù 6 µs, TÝÎ = 150°C

350

250

I»†

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

RÚÌ†™

0,80 K/W

K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

0,20

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Christoph Messelke

approved by: Robert Severin

date of publication: 2006-1-2

revision: 2.0

12 3 4 5 6 7 8

中文翻译

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与FS50R06KE3相关器件

型号	品牌	获取价格	描述	数据表
FS50R06KF	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 50A I(C)
FS50R06KF2	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 50A I(C)
FS50R06KF3	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 50A I(C)
FS50R06KL2	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 50A I(C)
FS50R06W1E3	INFINEON	获取价格	EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
FS50R06W1E3_B11	INFINEON	获取价格	EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT /
FS50R06W1E3BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22
FS50R06YE3	EUPEC	获取价格	IGBT-modules
FS50R06YL4	EUPEC	获取价格	IGBT-Module
FS50R07N2E4	INFINEON	获取价格	EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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