Datasheet > FS100R12W2T7_B11

FS100R12W2T7_B11

更新时间： 2024-11-06 14:55:51

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FS100R12W2T7_B11 数据手册

FS100R12W2T7_B11

™

EasyPACK module

™

EasyPACK module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and PressFIT / NTC

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 100 A / I_CRM= 200 A

- TRENCHSTOP^TMIGBT7

- Low V_CE,sat

- Overload operation up to 175°C

• Mechanical features

- PressFIT contact technology

- High power density

- Compact design

- Al₂O₃substrate with low thermal resistance

- 2.5 kV AC 1 minute insulation

Potential applications

• Auxiliary inverters

• Servo drives

• Air conditioning

• Motor drives

• UPS systems

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2023-05-19

12 3 4 5 6 7...16

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FS100R17KE3	INFINEON	获取价格	EconoPACK? 3 1700 V, 100 A 六单元 IGBT 模块，采用第三代
FS100R17KE3BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, MODULE-35
FS100R17KS4F	INFINEON	获取价格	EconoPACK3 module with fast IGBT2 and SiC Diode for high frequency switching and NTC
FS100R17N3E4	INFINEON	获取价格	EconoDUAL? 3?1700 V，100 A 六单元 IGBT 模块，采用第四代快速
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FS100R17N3E4B11BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor
FS100R17N3E4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES