FS100UM-03

更新时间： 2024-11-20 22:08:27

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
4页	47K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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中文翻译

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数据手册

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FS100UM-03 数据手册

MITSUBISHI Nch POWER MOSFET

FS100UM-03

HIGH-SPEED SWITCHING USE

FS100UM-03

OUTLINE DRAWING

Dimensions in mm

4.5

1.3

10.5MAX.

f 3.6

1.0

0.8

2.54

0.5

2.6

w e

w r

q GATE

¡10V DRIVE

w DRAIN

e SOURCE

r DRAIN

¡VDSS .................................................................................. 30V

¡rDS (ON) (MAX) .............................................................5.4mΩ

¡ID .......................................................................................100A

¡Integrated Fast Recovery Diode (TYP.) ...........100ns

TO-220

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

±20

100

IDM

IDA

Drain current (Pulsed)

400

Avalanche drain current (Pulsed) L = 30µH

Source current

100

ISM

Source current (Pulsed)

Maximum power dissipation

Channel temperature

400

125

°C

Tch

Tstg

—

–55 ~ +150

2.0

Storage temperature

°C

Weight

Typical value

Feb.1999

12 3 4

中文翻译

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与FS100UM-03相关器件

型号	品牌	获取价格	描述	数据表
FS100UMH03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 100A I(D) \| TO-220AB
FS100UMH-03	POWEREX	获取价格	Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M
FS100UMH-03	MITSUBISHI	获取价格	Power Field-Effect Transistor, 100A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, M
FS100UMJ03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 100A I(D) \| TO-220AB
FS100UMJ-03	POWEREX	获取价格	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS100UMJ-03	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FS100UMJ-03F	RENESAS	获取价格	High-Speed Switching Use Nch Power MOS FET
FS100UMJ-03F-A8	RENESAS	获取价格	High-Speed Switching Use Nch Power MOS FET
FS100VS03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 100A I(D) \| TO-263AB
FS100VS-03	MITSUBISHI	获取价格	Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M