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FS100VS-03 PDF预览

FS100VS-03

更新时间: 2024-11-18 21:19:19
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
4页 37K
描述
Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

FS100VS-03 技术参数

生命周期:Obsolete零件包装代码:TO-220S
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0054 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FS100VS-03 数据手册

 浏览型号FS100VS-03的Datasheet PDF文件第2页浏览型号FS100VS-03的Datasheet PDF文件第3页浏览型号FS100VS-03的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS100VS-03  
HIGH-SPEED SWITCHING USE  
FS100VS-03  
OUTLINE DRAWING  
Dimensions in mm  
r
10.5MAX.  
4.5  
1.3  
+0.3  
–0  
0
1
5
B
0.5  
0.8  
q
w e  
w r  
q GATE  
¡10V DRIVE  
w DRAIN  
e SOURCE  
r DRAIN  
q
¡VDSS .................................................................................. 30V  
¡rDS (ON) (MAX) .............................................................5.4m  
¡ID .......................................................................................100A  
¡Integrated Fast Recovery Diode (TYP.) ...........100ns  
e
TO-220S  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
VGS = 0V  
VDS = 0V  
30  
±20  
V
V
100  
A
IDM  
IDA  
Drain current (Pulsed)  
400  
A
Avalanche drain current (Pulsed) L = 30µH  
Source current  
100  
A
IS  
100  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
400  
A
PD  
125  
W
°C  
Tch  
Tstg  
–55 ~ +150  
–55 ~ +150  
1.2  
Storage temperature  
°C  
g
Weight  
Typical value  
Feb.1999  

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