FS100VSJ-03F

更新时间： 2024-11-05 07:00:11

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
7页	103K
描述
High-Speed Switching Use Nch Power MOS FET

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FS100VSJ-03F 数据手册

FS100VSJ-03F

High-Speed Switching Use

Nch Power MOS FET

REJ03G0264-0100

Rev.1.00

Aug.20.2004

Features

•

Drive voltage : 4 V

V_DSS: 30 V

_{DS(ON) (max)}: 4.0 mΩ

I_D: 100 A

Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns

Outline

TO-220S

2, 4

1. Gate

2. Drain

3. Source

4. Drain

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

Conditions

±20

V_GS= 0 V

V_DS= 0 V

100

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

I_DM

400

I_DA

100

L = 10 µH

I_SM

100

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

I_SA

400

P_D

125

°C

Tch

Tstg

—

– 55 to +150

1.2

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

12 3 4 5 6 7

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