Datasheet > FS100R17N3E4_B11

FS100R17N3E4_B11

更新时间： 2024-11-06 11:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	536K
描述
PressFIT

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中文翻译

获取价格

数据手册

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FS100R17N3E4_B11 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS100R17N3E4_B11

EconoPACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTC

EconoPACK™3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC

Vorläufige Daten / Preliminary data

V†Š» = 1700V

I† ÒÓÑ = 100A / I†ç¢ = 200A

Typische Anwendungen

Typical Applications

Motorantriebe

USV-Systeme

Motor Drives

UPS Systems

•

Elektrische Eigenschaften

Electrical Features

Erweiterte Sperrschichttemperatur TÝÎ ÓÔ

Niedriges V†ŠÙÈÚ

Extended Operation Temperature TÝÎ ÓÔ

Low V†ŠÙÈÚ

•

V†ŠÙÈÚ mit positivem Temperaturkoeffizienten

V†ŠÙÈÚ with positive Temperature Coefficient

Mechanische Eigenschaften

Mechanical Features

Integrierter NTC Temperatur Sensor

Isolierte Bodenplatte

Integrated NTC temperature sensor

Isolated Base Plate

•

PressFIT Verbindungstechnik

Standardgehäuse

PressFIT Contact Technology

Standard Housing

Module Label Code

Barcode Code 128

Content of the Code

Digit

Module Serial Number

1 - 5

Module Material Number

Production Order Number

Datecode (Production Year)

Datecode (Production Week)

6 - 11

12 - 19

20 - 21

22 - 23

DMX - Code

prepared by: AS

approved by: RS

date of publication: 2012-01-13

revision: 2.0

material no: 35734

UL approved (E83335)

12 3 4 5 6 7...9

中文翻译

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与FS100R17N3E4_B11相关器件

型号	品牌	获取价格	描述	数据表
FS100R17N3E4B11BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor
FS100R17N3E4BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES
FS100R17PE4	INFINEON	获取价格	EconoPACK™4 Modul mit Trench/Feldstopp IGBT4
FS100SM03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 100A I(D) \| TO-247VAR
FS100SM-03	MITSUBISHI	获取价格	Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M
FS100SMH03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 100A I(D) \| TO-247VAR
FS100SMH-03	POWEREX	获取价格	Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M
FS100SMH-03	MITSUBISHI	获取价格	Power Field-Effect Transistor, 100A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, M
FS100SMJ03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 100A I(D) \| TO-247VAR
FS100SMJ-03	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE