是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X13 | 针数: | 20 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.57 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 100 A |
集电极-发射极最大电压: | 1700 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X13 |
元件数量: | 6 | 端子数量: | 13 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 600 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1240 ns |
标称接通时间 (ton): | 280 ns | VCEsat-Max: | 2.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS100SM03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-247VAR | |
FS100SM-03 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M | |
FS100SMH03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-247VAR | |
FS100SMH-03 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M | |
FS100SMH-03 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, M | |
FS100SMJ03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-247VAR | |
FS100SMJ-03 | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE | |
FS100SMJ-03 | POWEREX |
获取价格 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE | |
FS100UM03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-220AB | |
FS100UM-03 | POWEREX |
获取价格 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |