5秒后页面跳转
FS100SMJ-03 PDF预览

FS100SMJ-03

更新时间: 2024-11-04 22:32:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
4页 43K
描述
HIGH-SPEED SWITCHING USE

FS100SMJ-03 技术参数

生命周期:Transferred零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.38Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):100 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):400 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS100SMJ-03 数据手册

 浏览型号FS100SMJ-03的Datasheet PDF文件第2页浏览型号FS100SMJ-03的Datasheet PDF文件第3页浏览型号FS100SMJ-03的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS100SMJ-03  
HIGH-SPEED SWITCHING USE  
FS100SMJ-03  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
15.9MAX.  
1.5  
r
f 3.2  
2
4.4  
G
1.0  
5.45  
q
w
e
5.45  
0.6  
2.8  
4
w r  
¡4V DRIVE  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
¡VDSS ................................................................................. 30V  
¡rDS (ON) (MAX) ............................................................ 4.7m  
¡ID ...................................................................................... 100A  
¡Integrated Fast Recovery Diode (TYP.) .......... 100ns  
q
e
TO-3P  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
30  
±20  
V
100  
A
IDM  
IDA  
Drain current (Pulsed)  
400  
A
Avalanche drain current (Pulsed) L = 30µH  
Source current  
100  
A
IS  
100  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
400  
A
PD  
150  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
4.8  
Tstg  
Storage temperature  
Weight  
Typical value  
Feb.1999  

与FS100SMJ-03相关器件

型号 品牌 获取价格 描述 数据表
FS100UM03 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-220AB
FS100UM-03 POWEREX

获取价格

Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS100UM-03 MITSUBISHI

获取价格

HIGH-SPEED SWITCHING USE
FS100UMH03 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-220AB
FS100UMH-03 POWEREX

获取价格

Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M
FS100UMH-03 MITSUBISHI

获取价格

Power Field-Effect Transistor, 100A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, M
FS100UMJ03 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-220AB
FS100UMJ-03 POWEREX

获取价格

Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS100UMJ-03 MITSUBISHI

获取价格

HIGH-SPEED SWITCHING USE
FS100UMJ-03F RENESAS

获取价格

High-Speed Switching Use Nch Power MOS FET