生命周期: | Transferred | 包装说明: | MODULE-35 |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 145 A |
集电极-发射极最大电压: | 1700 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X35 | 元件数量: | 6 |
端子数量: | 35 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1100 ns | 标称接通时间 (ton): | 450 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS100R17KE3BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, MODULE-35 | |
FS100R17KS4F | INFINEON |
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EconoPACK3 module with fast IGBT2 and SiC Diode for high frequency switching and NTC | |
FS100R17N3E4 | INFINEON |
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EconoDUAL? 3?1700 V,100 A 六单元 IGBT 模块,采用第四代快速 | |
FS100R17N3E4_B11 | INFINEON |
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PressFIT | |
FS100R17N3E4B11BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor | |
FS100R17N3E4BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES | |
FS100R17PE4 | INFINEON |
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EconoPACK™4 Modul mit Trench/Feldstopp IGBT4 | |
FS100SM03 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-247VAR | |
FS100SM-03 | MITSUBISHI |
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Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M | |
FS100SMH03 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-247VAR |