5秒后页面跳转
FS100R17KE3BOSA1 PDF预览

FS100R17KE3BOSA1

更新时间: 2024-11-05 14:42:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
8页 422K
描述
Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, MODULE-35

FS100R17KE3BOSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X35针数:35
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:5.59
外壳连接:ISOLATED最大集电极电流 (IC):145 A
集电极-发射极最大电压:1700 V配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码:R-XUFM-X35元件数量:6
端子数量:35最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):1100 ns
标称接通时间 (ton):450 nsBase Number Matches:1

FS100R17KE3BOSA1 数据手册

 浏览型号FS100R17KE3BOSA1的Datasheet PDF文件第2页浏览型号FS100R17KE3BOSA1的Datasheet PDF文件第3页浏览型号FS100R17KE3BOSA1的Datasheet PDF文件第4页浏览型号FS100R17KE3BOSA1的Datasheet PDF文件第5页浏览型号FS100R17KE3BOSA1的Datasheet PDF文件第6页浏览型号FS100R17KE3BOSA1的Datasheet PDF文件第7页 
TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation  
IGBT-Module  
IGBT-modules  
FS100R17KE3  
VorläufigeꢀDaten  
PreliminaryꢀData  
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter  
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues  
Kollektor-Emitter-Sperrspannung  
Collector-emitterꢀvoltage  
Tvj = 25°C  
VCES  
1700  
V
Kollektor-Dauergleichstrom  
ContinuousꢀDCꢀcollectorꢀcurrent  
TC = 80°C, Tvj max = 150°C  
TC = 25°C, Tvj max = 150°C  
IC nom  
IC  
100  
145  
A
A
PeriodischerꢀKollektor-Spitzenstrom  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
tP = 1 ms  
ICRM  
Ptot  
200  
555  
A
Gesamt-Verlustleistung  
Totalꢀpowerꢀdissipation  
TC = 25°C, Tvj max = 150  
W  
Gate-Emitter-Spitzenspannung  
Gate-emitterꢀpeakꢀvoltage  
VGES  
+/-20  
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
Kollektor-Emitter-Sättigungsspannung  
Collector-emitterꢀsaturationꢀvoltage  
IC = 100 A, VGE = 15 V  
IC = 100 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
2,00 2,45  
2,40  
V
V
VCE sat  
VGEth  
QG  
Gate-Schwellenspannung  
Gateꢀthresholdꢀvoltage  
IC = 4,00 mA, VCE = VGE, Tvj = 25°C  
VGE = -15 V ... +15 V  
5,2  
5,8  
1,20  
7,5  
9,00  
0,29  
6,4  
V
µC  
Gateladung  
Gateꢀcharge  
InternerꢀGatewiderstand  
Internalꢀgateꢀresistor  
Tvj = 25°C  
RGint  
Cies  
Eingangskapazität  
Inputꢀcapacitance  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
VCE = 1700 V, VGE = 0 V, Tvj = 25°C  
VCE = 0 V, VGE = 20 V, Tvj = 25°C  
nF  
nF  
Rückwirkungskapazität  
Reverseꢀtransferꢀcapacitance  
Cres  
ICES  
IGES  
td on  
Kollektor-Emitter-Reststrom  
Collector-emitterꢀcut-offꢀcurrent  
5,0 mA  
Gate-Emitter-Reststrom  
Gate-emitterꢀleakageꢀcurrent  
400 nA  
µs  
Einschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 900 V  
VGE = ±15 V  
RGon = 4,0 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,37  
0,40  
µs  
Anstiegszeit,ꢀinduktiveꢀLast  
Riseꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 900 V  
VGE = ±15 V  
RGon = 4,0 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,04  
0,05  
µs  
µs  
tr  
td off  
tf  
Abschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 900 V  
VGE = ±15 V  
RGoff = 4,0 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,65  
0,80  
µs  
µs  
Fallzeit,ꢀinduktiveꢀLast  
Fallꢀtime,ꢀinductiveꢀload  
IC = 100 A, VCE = 900 V  
VGE = ±15 V  
RGoff = 4,0 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,18  
0,30  
µs  
µs  
EinschaltverlustenergieꢀproꢀPuls  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 100 A, VCE = 900 V, LS = 30 nH  
VGE = ±15 V  
RGon = 4,0 Ω  
Tvj = 25°C  
Tvj = 125°C  
22,0  
32,0  
mJ  
mJ  
Eon  
Eoff  
AbschaltverlustenergieꢀproꢀPuls  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
IC = 100 A, VCE = 900 V, LS = 30 nH  
VGE = ±15 V  
RGoff = 4,0 Ω  
Tvj = 25°C  
Tvj = 125°C  
21,5  
31,5  
mJ  
mJ  
Kurzschlußverhalten  
SCꢀdata  
VGE 15 V, VCC = 1000 V  
VCEmax = VCES -LsCE ·di/dt  
ISC  
tP 10 µs, Tvj = 125°C  
400  
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
proꢀIGBTꢀ/ꢀperꢀIGBT  
RthJC  
Tvj op  
0,225 K/W  
125 °C  
TemperaturꢀimꢀSchaltbetrieb  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
preparedꢀby:ꢀMW  
approvedꢀby:ꢀWR  
dateꢀofꢀpublication:ꢀ2013-10-03  
revision:ꢀ2.0  
1

与FS100R17KE3BOSA1相关器件

型号 品牌 获取价格 描述 数据表
FS100R17KS4F INFINEON

获取价格

EconoPACK3 module with fast IGBT2 and SiC Diode for high frequency switching and NTC
FS100R17N3E4 INFINEON

获取价格

EconoDUAL? 3?1700 V,100 A 六单元 IGBT 模块,采用第四代快速
FS100R17N3E4_B11 INFINEON

获取价格

PressFIT
FS100R17N3E4B11BOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor
FS100R17N3E4BOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES
FS100R17PE4 INFINEON

获取价格

EconoPACK™4 Modul mit Trench/Feldstopp IGBT4
FS100SM03 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-247VAR
FS100SM-03 MITSUBISHI

获取价格

Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M
FS100SMH03 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-247VAR
FS100SMH-03 POWEREX

获取价格

Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, M