Datasheet > FQU2N90TU-AM002

FQU2N90TU-AM002

更新时间： 2024-11-22 11:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	1886K
描述
N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω

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FQU2N90TU-AM002 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	0.79	配置：	Single
最大漏极电流 (Abs) (ID)：	1.7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

FQU2N90TU-AM002 数据手册

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

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与FQU2N90TU-AM002相关器件

型号	品牌	获取价格	描述	数据表
FQU2N90TU-WS	ONSEMI	获取价格	N 沟道 QFET® MOSFET 900V，1.7A，7.2Ω
FQU2P25	FAIRCHILD	获取价格	250V P-Channel MOSFET
FQU2P25TU	FAIRCHILD	获取价格	暂无描述
FQU2P40	FAIRCHILD	获取价格	400V P-Channel MOSFET
FQU30N06	FAIRCHILD	获取价格	60V N-Channel MOSFET
FQU30N06_09	FAIRCHILD	获取价格	60V N-Channel MOSFET
FQU30N06L	FAIRCHILD	获取价格	60V LOGIC N-Channel MOSFET
FQU30N06LTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 24A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Met
FQU30N06TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 22.7A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, M
FQU3N25	FAIRCHILD	获取价格	250V N-Channel MOSFET

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