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FQU3N60CTU

更新时间： 2024-09-14 11:15:35

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FQU3N60CTU 数据手册

FQU3N60CTU

N-Channel QFET⁾MOSFET

600 V, 2.4 A, 3.4 W

This N−Channel enhancement mode power MOSFET is produced

using ON Semiconductor’s proprietary planar stripe and DMOS

technology. This advanced MOSFET technology has been especially

tailored to reduce on−state resistance, and to provide superior

switching performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

www.onsemi.com

Features

• 2.4 A, 600 V, R

= 3.4 ꢀ (Max.) @ V = 10 V, I = 1.2 A

GS D

• Low Gate Charge (Typ. 10.5 nC)

DS(on)

• Low C (Typ. 5 pF)

rss

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• LCD / LED TV

• Lighting

• Charger / Adapter

IPAK3

CASE 369AR

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 2 of this data sheet.

Publication Order Number:

May, 2019 − Rev. 0

FQU3N60CTU/D

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
FQU3N60TU	ROCHESTER	获取价格	2.4A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
FQU3N60TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Met
FQU3P20	FAIRCHILD	获取价格	200V P-Channel MOSFET
FQU3P20TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Met
FQU3P50	FAIRCHILD	获取价格	500V P-Channel MOSFET
FQU3P50TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Met
FQU45N03L	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 30A I(D) \| TO-262AA
FQU4N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQU4N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQU4N20LTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met