FQU4P40TU

更新时间： 2024-11-23 13:07:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲局域网
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中文翻译

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数据手册

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FQU4P40TU 数据手册

August 2000

QFET

FQD4P40 / FQU4P40

400V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for electronic lamp ballast based on complimentary

half bridge.

•

-2.7A, -400V, R

= 3.1Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 18 nC)

Low Crss ( typical 11 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

▶

▲

●

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD4P40 / FQU4P40

Units

Drain-Source Voltage

-400

-2.7

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-1.71

-10.8

± 30

260

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

-2.7

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

V/ns

dv/dt

-4.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.5

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, August 2000

12 3 4 5 6 7...9

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