是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-251 |
包装说明: | ROHS COMPLIANT, IPAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.45 |
雪崩能效等级(Eas): | 330 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 3.7 A |
最大漏源导通电阻: | 1.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | NOT APPLICABLE |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 14.8 A | 认证状态: | COMMERCIAL |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQU5P20TU_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Met |
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FQU60N03L | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40.3A I(D) | TO-251AA |
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FQU630 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |
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FQU6N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET |
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FQU6N15TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Met |
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FQU6N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |
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FQU6N25TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal |
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FQU6N40 | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET |
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FQU6N40C | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET |
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FQU6N40CTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal |
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