是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-251 | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
雪崩能效等级(Eas): | 380 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 300 V | 最大漏极电流 (Abs) (ID): | 5.5 A |
最大漏极电流 (ID): | 5.5 A | 最大漏源导通电阻: | 0.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 22 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FQU7P06 | FAIRCHILD | 60V P-Channel MOSFET |
获取价格 |
|
FQU7P06TU | ROCHESTER | 5.4A, 60V, 0.451ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 |
获取价格 |
|
FQU7P06TU | FAIRCHILD | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Me |
获取价格 |
|
FQU7P06TU_NB82048 | FAIRCHILD | Transistor |
获取价格 |
|
FQU7P20 | FAIRCHILD | 200V P-Channel MOSFET |
获取价格 |
|
FQU7P20TU | FAIRCHILD | Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Me |
获取价格 |