是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-251 | 包装说明: | IPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.68 |
雪崩能效等级(Eas): | 570 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 5.7 A |
最大漏极电流 (ID): | 5.7 A | 最大漏源导通电阻: | 0.69 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 55 W |
最大脉冲漏极电流 (IDM): | 22.8 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQU7P20TU_AM002 | FAIRCHILD |
获取价格 |
Transistor |
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FQU7P20TU-NL | FAIRCHILD |
获取价格 |
暂无描述 |
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FQU8N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |
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FQU8N25TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.2A I(D), 250V, 0.55ohm, 1-Element, N-Channel, Silicon, Me |
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FQU8P10 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET |
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FQU8P10TU | FAIRCHILD |
获取价格 |
P-Channel QFET® MOSFET -100V, -6.6A, 530mΩ, TO251 (IPAK) MOLDED,3 LEAD, |
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FQU8P10TU | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-100 V,-6.6 A,530 mΩ,IPA |
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FQU8P10TU_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Me |
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FQU9N08 | FAIRCHILD |
获取价格 |
80V N-Channel MOSFET |
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FQU9N08L | FAIRCHILD |
获取价格 |
80V LOGIC N-Channel MOSFET |
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