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FQU7P20TU PDF预览

FQU7P20TU

更新时间: 2024-01-24 19:47:40
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
8页 830K
描述
Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

FQU7P20TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251包装说明:IPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.68
雪崩能效等级(Eas):570 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):5.7 A
最大漏极电流 (ID):5.7 A最大漏源导通电阻:0.69 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):55 W
最大脉冲漏极电流 (IDM):22.8 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQU7P20TU 数据手册

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November 2013  
FQD7P20  
P-Channel QFET® MOSFET  
-200 V, -5.7 A, 690 mΩ  
Description  
Features  
This P-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor’s proprietary planar  
stripe and DMOS technology. This advanced MOSFET  
technology has been especially tailored to reduce on-state  
resistance, and to provide superior switching performance  
and high avalanche energy strength. These devices are  
suitable for switched mode power supplies, audio amplifier,  
DC motor control, and variable switching power applications.  
-5.7 A, -200 V, RDS(on) = 690 m(Max.) @ VGS = -10 V,  
ID = -2.85 A  
Low Gate Charge (Typ. 19 nC)  
Low Crss (Typ. 25 pF)  
100% Avalanche Tested  
S
D
G
G
S
D-PAK  
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted.  
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Thermal Characteristics  
Symbol  
Parameter  
Unit  
FQD7P20TM  
RJC  
RJA  
Thermal Resistance, Junction to Case, Max.  
2.27  
110  
50  
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.  
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.  
oC/W  
www.fairchildsemi.com  
©2000 Fairchild Semiconductor Corporation  
FQD7P20 Rev. C0  
1

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